Deposition mask, producing method therefor and forming method for thin film pattern

ABSTRACT

A deposition mask for forming a thin film pattern having a predetermined shape on a substrate by deposition, includes a resin film that transmits visible light and has an opening pattern penetrating through the resin film and having the same shape and dimension as those of the thin film pattern so as to correspond to a preliminarily determined forming region of the thin film pattern on the substrate.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of U.S. application Ser.No. 14/214,428, filed Mar. 14, 2014, which is a continuation applicationof PCT/JP2012/073617, filed on Sep. 14, 2012, both of which are herebyincorporated by reference in their entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a deposition mask for forming aplurality of thin film patterns on a substrate by deposition, and inparticular, relates to a deposition mask enabling formation of fine thinfilm patterns, a method for producing the deposition mask and formingthin film patterns.

2. Description of Related Art

Conventionally, this sort of mask has openings having a shapecorresponding to a predetermined pattern, and which is configured to bealigned to a substrate, brought into close contact with the substrateand used for deposition to the substrate through the openings to formthe patterns (for example, refer to Japanese Laid-open (Kokai) PatentApplication Publication No. 2003-73804 (Patent Document 1)).

Furthermore, another deposition mask is a metal mask made of aferromagnetic material provided with openings corresponding to apredetermined pattern, which is configured to be brought into closecontact with a substrate so as to cover one surface thereof and is fixedto the substrate by using a magnetic force of a magnet disposed on theother side of the substrate, and is used for adhering a depositionmaterial to the surface of the substrate through the above openings in avacuum chamber of a vacuum deposition apparatus, to thereby form a thinfilm pattern (for example, refer to Japanese Laid-open (Kokai) PatentApplication Publication No. 2009-164020 (Patent Document 2)).

However, among conventional deposition masks, the deposition maskdisclosed in Patent Document 1 is, in general, a thin metal plate havingopenings corresponding to a thin film pattern formed by etching, forexample. Thus, it is difficult to form the openings with high accuracy,and due to alignment error caused by thermal expansion or warp of themetal plate, it is difficult to form a fine thin film pattern of, forexample, 300 dpi or higher.

Furthermore, the deposition mask disclosed in Patent Document 2 isimproved in close contact with the substrate as compared with thedeposition mask of Patent Document 1. However, in the same manner as thedeposition mask of Patent Document 1, since the mask is a thin metalplate having openings corresponding to a thin film pattern formed byetching, for example, it is difficult to form the openings with highaccuracy, and it is difficult to form a fine pattern of, for example,300 dpi or higher.

Therefore, in view of the abovementioned problem, it is an object of thepresent invention to provide a deposition mask enabling formation of afine thin film pattern, a method for producing the deposition mask and amethod for forming a thin film pattern.

SUMMARY OF THE INVENTION

In order to achieve the above object, a deposition mask according to afirst aspect of the present invention is a deposition mask for forming athin film pattern having a predetermined shape on a substrate bydeposition, including a resin film that transmits visible light and hasan opening pattern penetrating through the resin film and having thesame shape and dimension as those of the thin film pattern so as tocorrespond to a preliminarily determined forming region of the thin filmpattern on the substrate.

It is preferred that the deposition mask has a metal member provided ona portion of the film outside the opening pattern. In this case, it ispreferred that the metal member be a thin plate that has an openingcorresponding to the opening pattern and having a dimension greater thanthe opening pattern, and be provided in close contact with one surfaceof the film. As an alternative, the metal member may be a plurality ofthin pieces provided so as to be distributed on one surface or inside ofthe film.

Furthermore, in a method for producing a deposition mask according to asecond aspect of the present invention, an opening pattern having thesame shape and dimension as those of the thin film pattern is formedthrough a resin film that transmits visible light so as to correspond toa preliminarily determined forming region of the thin film pattern on asubstrate. The method includes: a first step of bringing the film intoclose contact with a substrate on which the thin film pattern is to beformed, or with a reference substrate provided with a plurality ofreference patterns having the same pitch as that of the thin filmpattern and having the same shape and dimension of those of the thinfilm pattern; and a second step of processing a portion of the filmcorresponding to the forming region of the thin film pattern on thesubstrate on which the thin film pattern is to be formed or thereference patterns on the reference substrate, to form an openingpattern having the same shape and dimension as those of the thin filmpattern.

It is preferred that the first step is performed, after bringing a metalmember having an opening formed so as to correspond to the thin filmpattern and having a shape and size greater than those of the thin filmpattern, into close contact with one surface of the film, therebyforming a masking member, by aligning the masking member so that theregion corresponding to the forming region of the thin film pattern onthe substrate on which the thin film pattern is to be formed or thereference patterns on the reference substrate, is within the openings.

Furthermore, it is preferred that the second step is performed byirradiating the portion of the film with laser light. In this case, itis preferred that the second step includes irradiating the film withlaser light having a predetermined energy density to process the film ata predetermined speed to form a hole of a predetermined depth, followedby irradiating a bottom portion of the hole with laser light having alowered energy density to process the portion at a lower speed than theabove speed to make the hole penetrate through the film.

As an alternative, the second step includes irradiating the film withlaser light having a predetermined energy density to form the hole inthe film, followed by etching the bottom portion of the hole by using areactive gas that reacts with carbon of the film to evaporate thecarbon, or by using radical ions produced by ionizing the reactive gas,to make the hole penetrate through the film.

Here, the laser light preferably has a wavelength of 400 nm or less.

Furthermore, in a method for producing a deposition mask according to athird aspect of the present invention, an opening pattern having thesame shape and dimension as those of the thin film pattern is formedthrough a resin film that transmits visible light so as to correspond toa preliminarily determined forming region of the thin film pattern on asubstrate, the method includes: a first step of bringing a metal memberinto close contact with one surface of the film, and the metal memberhaving an opening having a shape and dimension greater than those of thethin film pattern so as to correspond to a preliminarily determinedforming region of the thin film pattern on a substrate, to form amasking member; and a second step of performing an etching process tothe film within the opening to form an opening pattern having the sameshape and dimension as those of the thin film pattern.

It is preferred that the second step includes performing the etchingprocess to the film from the other side thereof to form the openingpattern so that the opening area on one side of the film is the same asthat of the thin film pattern and the opening area on the other side ofthe film is greater than the opening area on said one side of the film.

Furthermore, in a method for forming a thin film pattern according to afourth aspect of the present invention, a thin film pattern is formed byusing a deposition mask that is produced by forming through a resin filmthat transmits visible light an opening pattern having the same shapeand dimension as those of the thin film pattern so as to correspond to apreliminarily determined forming region of the thin film pattern on asubstrate. The method includes: a first step of bringing the film intoclose contact with the substrate; a second step of irradiating a portionof the film corresponding to the forming region of the thin film patternwith laser light, to form an opening pattern having the same shape anddimension of those of the thin film pattern on the film to thereby formthe deposition mask; a third step of performing deposition on theportion corresponding to the forming region of the thin film pattern onthe substrate through the opening of the deposition mask; and a fourthstep of detaching the deposition mask.

It is preferred that the first step includes placing the substrate on astage having a chucking device provided therein, aligning a maskingmember, that is formed by bringing a metal member into close contactwith one surface of the film, the metal member being made of a magneticor non-magnetic material having an opening having a shape and adimension larger than those of the thin film pattern so as to correspondto the thin film pattern, so that the forming region of the thin filmpattern on the substrate is present within the opening, and attractingthe metal member on to the substrate by the chucking device to sandwichthe film.

Furthermore, in a method for forming a thin film pattern according to afifth aspect of the present invention, a thin film pattern is formed byusing a deposition mask that is produced by forming through a resinfilm, that transmits visible light, an opening pattern having the sameshape and dimension as those of the thin film pattern so as tocorrespond to a preliminarily determined forming region of the thin filmpattern on a substrate. The method includes: a first step of placing onthe substrate, the deposition mask having a metal member on the outsideportion of the opening pattern of the film, in a state that the openingpattern is aligned to the forming region of the thin film pattern on thesubstrate; and a second step of performing deposition on the formingregion of the thin film pattern on the substrate through the openingpattern of the deposition mask to form the thin film pattern.

It is preferred that the first step includes retaining the depositionmask so that the metal member side thereof is attracted to contact aflat surface of a retaining device, while aligning the deposition maskso that the opening pattern is aligned to the forming region of the thinfilm pattern of the substrate placed on a chucking device, followed byattracting the metal member by the chucking device to transfer thedeposition mask from the retaining device on to the substrate.

In this case, it is preferred that in a case in which there is aplurality of sorts of thin film patterns and the opening pattern formedthrough the film is formed so as to correspond to one sort of thin filmpattern among the plurality of sorts of thin film patterns, the methodfurther includes: a step of detaching the deposition mask from thesubstrate after performing the first and the second steps to form onesort of thin film pattern; a step of aligning the opening pattern of thedeposition mask to the forming region of another thin film pattern ofthe substrate, and placing the deposition mask onto the substrate; and astep of performing deposition on a forming region of another thin filmpattern through the opening pattern of the deposition mask, to formanother thin film pattern.

As an alternative, in a case in which a plurality of sorts of thin filmpatterns are formed so as to be arranged at a predetermined pitch; theopening pattern formed through the film is formed so as to correspond toone sort of thin film pattern among the plurality of sorts of thin filmpatterns, the method further includes: a step of sliding the depositionmask on the substrate along an arrangement direction of the plurality ofsorts of thin film patterns by the same distance as the arrangementpitch of the plurality of sorts of thin film patterns after performingthe first step and the second step to form one sort of thin filmpattern; and a step of performing deposition on a forming region ofanother thin film pattern through the opening pattern of the depositionmask, to form another thin film pattern.

According to the embodiment of the present invention, the openingpattern through which the deposition material passes is formed in a filmhaving smaller thickness than a metal mask, thus enabling to enhanceforming accuracy of the opening pattern. Accordingly, it is possible toform a fine thin film pattern.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1E are cross-sectional explanation views illustrating afirst embodiment of a method for producing a deposition mask of thepresent invention, and a first embodiment of a method for forming a thinfilm pattern of the present invention.

FIGS. 2A to 2C are cross-sectional views illustrating a modified exampleof the first embodiment of method for producing the deposition mask ofthe present invention, and in particular, illustrating a process forforming the opening pattern.

FIG. 3A to 3C are cross-sectional views illustrating still modifiedexample of the first embodiment of method for producing the depositionmask of the present invention, and in particular, illustrating a processfor forming the opening pattern.

FIGS. 4A to 4G are views illustrating a second embodiment of a methodfor producing a deposition mask of the present invention, and a secondembodiment of a method for forming a thin film pattern of the presentinvention, which are cross-sectional explanation views illustrating aprocess for forming a red (R) organic electroluminescence (EL) layer ofan organic EL display device.

FIGS. 5A to 5C are explanation views illustrating formation of a maskmember to be used in the process for forming an R organic EL layer.

FIGS. 6A to 6G are views illustrating the second embodiment of themethod for producing a deposition mask of the present invention, and thesecond embodiment of the method for forming a thin film pattern of thepresent invention, which are cross-sectional explanation viewsillustrating a process for forming a green (G) organic EL layer of theorganic EL display device.

FIGS. 7A to 7G are views illustrating the second embodiment of themethod for producing a deposition mask of the present invention, and thesecond embodiment of the method for forming a thin film pattern of thepresent invention, which are cross-sectional explanation viewsillustrating a process for forming a blue (B) organic EL layer of theorganic EL display device.

FIGS. 8A to 8D are cross-sectional explanation views illustrating aprocess for forming a cathode electrode layer of the organic EL displaydevice.

FIG. 9 is a front view illustrating a construction example of a laserprocessing apparatus for forming a deposition mask to be used in theprocess for forming the organic EL layer.

FIGS. 10A and 10B are views illustrating a construction example of aphotomask to be used in the laser processing apparatus, in which FIG.10A is a front view and FIG. 10B is a cross-sectional view of a B-Bsection of FIG. 10A.

FIGS. 11A to 11G are cross-sectional explanation views illustrating amodified example of the second embodiment of the method for producingthe deposition mask of the present invention.

FIGS. 12A to 12E are process views illustrating a third embodiment ofthe method for producing the deposition mask of the present invention.

FIGS. 13A and 13B are views illustrating a construction example of thedeposition mask, in which FIG. 13A is a front view and FIG. 13B is across-sectional view of a C-C section of FIG. 13A.

FIG. 14 is a front view illustrating a modified example of thedeposition mask.

FIGS. 15A to 15C are explanation views illustrating example of formationof the mask member.

FIGS. 16A to 16C are explanation views illustrating another example offormation of a mask member.

FIGS. 17A to 17C are explanation views illustrating still anotherexample of formation of a mask member.

FIGS. 18A to 18C are explanation views illustrating still anotherexample of formation of a mask member.

FIGS. 19A to 19D are explanation views illustrating still anotherexample of formation of a mask member.

FIGS. 20A to 20C are explanation views illustrating still anotherexample of formation of a mask member.

FIGS. 21A to 21D are explanation views illustrating still anotherexample of formation of a mask member.

FIGS. 22A to 22H are explanation views illustrating still anotherexample of formation of a mask member.

FIGS. 23A to 23D are a view illustrating modified example of the thirdembodiment of the method for producing the deposition mask of thepresent invention, which are cross-sectional views illustrating a firsthalf process of the method.

FIGS. 24A to 24C are a view illustrating modified example of the thirdembodiment of the method for producing the deposition mask of thepresent invention, which are cross-sectional views illustrating a secondhalf process of the method.

FIGS. 25A to 25E are process views illustrating still modified exampleof the third embodiment of the method for producing the deposition maskof the present invention.

FIG. 26 is a plan view illustrating a construction example of areference substrate to be used in the method of FIGS. 25A to 25E.

FIGS. 27A and 27B are explanation views illustrating a method fordetecting whether or not a position error amount between an opening of ametal member and a reference pattern of the reference substrate iswithin a tolerance.

FIG. 28 is a flowchart illustrating the abovementioned laser processing.

FIGS. 29A to 29D are cross-sectional views illustrating a forthembodiment of a method for producing a deposition mask of the presentinvention which forms an opening pattern by an etching process.

FIGS. 30A to 30C are a view illustrating a method for forming a thinfilm pattern by using the deposition mask produced the methodillustrated in FIGS. 29A to 29D, in which are cross-sectional viewsillustrating a first half process of the method.

FIGS. 31A to 31C are a view illustrating a method for forming a thinfilm pattern by using the deposition mask produced the methodillustrated in FIGS. 29A to 29D, in which are cross-sectional viewsillustrating a second half process of the method.

FIGS. 32A and 32B are explanation views illustrating merits of thedeposition mask of the present invention having the opening patternformed by the etching process, as compared with a conventional metalmask, in which FIG. 32A shows the metal mask and FIG. 32B shows thedeposition mask of the present invention.

FIGS. 33A and 33B are views illustrating still another modified exampleof the deposition mask of the present invention, in which FIG. 33A is aplan view and FIG. 33B is a cross-sectional view of a D-D section inFIG. 33A.

FIGS. 34A and 34B are views illustrating a construction example of thedeposition mask that forms a basis of the present invention, in whichFIG. 34A is a plan view and FIG. 34B is a side view.

FIGS. 35A to 35H are views illustrating the method for producing thedeposition mask of 33A to 33B, which are cross-sectional viewsillustrating a process for forming a mask member in the method.

FIGS. 36A to 36C are views illustrating the method for producing thedeposition mask of 33A to 33B, which are plan views illustrating aprocess for forming an opening pattern.

FIG. 37 is a plan view illustrating still another modified example ofthe deposition mask.

FIGS. 38A to 38C are views illustrating a method for forming a pluralityof sorts of thin film patterns using the deposition mask produced by thepresent invention, which are cross-sectional views illustrating a firsthalf process for forming a red organic EL layer in the method.

FIGS. 39A to 39C are cross-sectional views illustrating a second halfprocess for forming the red organic EL layer.

FIGS. 40A to 40C are cross-sectional views illustrating a first halfprocess for forming a green organic EL layer of the plurality of sortsof thin film patterns.

FIGS. 41A to 41C are cross-sectional views illustrating a second halfprocess for forming the green organic EL layer.

FIGS. 42A to 42C are cross-sectional views illustrating a first halfprocess for forming a blue organic EL layer of the plurality of sorts ofthin film patterns.

FIGS. 43A to 43C are cross-sectional diagrams illustrating a second halfprocess for forming the blue organic EL layer.

FIGS. 44A to 44D are views illustrating still another modified exampleof the deposition mask, in which FIG. 44A is a plan view, FIG. 44B is abottom view, FIG. 44C is a cross-sectional view of an E-E section ofFIG. 44A, and FIG. 44D is a partial enlarged view of FIG. 44C.

FIGS. 45A to 45F are process views illustrating a process for producingthe deposition mask of FIGS. 44A to 44D.

FIG. 46 is a plan view illustrating a construction example of a film tobe used for the deposition mask of FIGS. 44A to 44D.

FIG. 47 is a plan view illustrating another construction example of afilm to be used for the deposition mask of FIGS. 44A to 44D.

FIGS. 48A to 48B are views illustrating a method for forming a thin filmpattern by using the deposition mask of FIGS. 44A to 44D, in which areprocess views illustrating a process for forming an R organic EL layerin the method.

FIGS. 49A and 49B are process views illustrating a process for forming aG organic EL layer by using the deposition mask of FIGS. 44A to 44D.

FIGS. 50A and 50B are process views illustrating a process for forming aB organic EL layer by using the deposition mask of FIGS. 44A to 44D.

FIG. 51 is a cross-sectional view illustrating a construction example ofa TFT (thin-film transistor) substrate for an organic EL display device.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinbelow, embodiments of the present invention will be explained withreference to the accompanying drawings. FIGS. 1A to 1E arecross-sectional explanation views illustrating a first embodiment of amethod for forming a thin film pattern by using a deposition mask of thepresent invention. The deposition mask of the present invention has afilm that is made of a resin transmitting light and has an openingpattern penetrating therethrough, so that the opening patterncorresponds to a forming region of a predetermined thin film pattern ona substrate and the opening pattern has the same shape and size of thoseof the thin film pattern. The mask is produced in the process of thefirst embodiment of the method for producing a thin film pattern. In acase in which the substrate is a TFT substrate 1 of an organicelectroluminescence (EL) display device and the thin film pattern is ared (R) organic EL layer 3R formed on an anode electrode 2Rcorresponding to red (R), a first embodiment of a deposition mask of thepresent invention will be explained while describing a first embodimentof the method for producing a thin film pattern for forming the Rorganic EL layer 3R.

Here, the R organic EL layer 3R is formed on the anode electrode 2Rcorresponding to R by sequentially performing deposition of a holeinjection layer, a hole transportation layer, a red light-emissionlayer, an electron transportation layer, and the like. However, forconvenience of explanation, it is assumed that the R organic EL layer 3Ris formed by a single deposition step.

The first embodiment of the method for forming a thin film patternincludes a first step of placing a film 4 that is made of a resintransmitting visible light on a TFT substrate (it may be simply referredto as “substrate”) 1; a second step 2 of irradiating an anode electrode2R portion for R on a TFT substrate 1 with laser light L1 having apredetermined energy density to dig the portion of the film 4 at apredetermined speed to a predetermined depth to form a hole 5, andprocessing a bottom portion of the hole 5 at a speed slower than theabove speed to make the hole 5 penetrate through the film to therebyform a first embodiment of the deposition mask 7 of the presentinvention having an opening pattern 6 having the same shape anddimension as those of an R organic layer 3R; a third step of forming theR organic EL layer 3R on the anode electrode 2R for R by depositionthrough the opening pattern 6 of the deposition mask 7; and a step 4 ofdetaching the deposition mask 7.

In more detail, in the first step, above a surface of the TFT substrate1 on which anode electrodes 2R to 2B for respective colors are formed, asheet-shaped film 4 of, for example, polyethylene terephthalate (PET) orpolyimide having a thickness of from 10 μm to 30 μm to which UV laserabrasion is possible, is stretched, and thereafter, as illustrated inFIG. 1A, the film 4 is placed on a surface of the TFT substrate 1. Inthis case, an upper surface of the film 4 is preferably uniformlypressed by an elastic member such as a urethane rubber to bring the film4 into close contact with the surface of the TFT substrate 1. As analternative, a surface of the film 4 to contact with the surface of theTFT substrate 1 may be provided with an adhesion layer, and the film 4may be brought into close contact with the surface of the TFT substrate1 via the adhesion layer. As another alternative, a film having aself-adhesion function may be employed. As still another alternative,the film 4 may be electrostatically attracted to the surface of the TFTsubstrate 1 by using for example, an electrostatic chuck. As stillanother alternative, the TFT substrate 1 may be placed on a stage havinga chucking device provided therein using a magnet, and thereafter, ametal member containing a magnetic material and having an opening havinga shape and a dimension greater than those of a pattern of the organicEL layer may be aligned and placed on the TFT substrate 1 so that theanode electrode 2R for R is positioned in the opening, and the metalmember may be attracted to the TFT substrate 1 by a static magneticfield of the magnet to thereby bring the film 4 into close contact withthe surface of the TFT substrate 1.

Next, in the second step, the position of the anode electrode 2R for Ris detected through the film 4 by an image capturing device, that is notillustrated, to locate an irradiation position of laser light on theanode electrode 2R for R. Furthermore, by using a laser having awavelength of 400 nm or shorter such as a KrF excimer laser of 248 nm,as illustrated in FIG. 1B, first, a portion of the film 4 correspondingto the anode electrode 2R on the TFT substrate 1 is irradiated withlaser light L having an energy density of from 1 J/cm² to 20 J/cm² toform a hole 5 at high speed until a timing just before the anodeelectrode 2R being an underlayer is exposed, for example, until a layerabove the electrode becomes about 2 μm thick, and thereafter,irradiation with laser light L1 is once stopped. Next, as illustrated inFIG. 1C, a bottom portion of the hole 5 is irradiated with laser lightL2 having a lowered energy density of 0.1 J/cm² or lower, preferably0.06 J/cm² or lower to slowly process the bottom portion of the hole 5to make it penetrate through the film, to thereby form the depositionmask 7 (first embodiment) of the present invention having the openingpattern 6. Since carbon bond of the film 4 is immediately destroyed bylight energy of UV laser lights L1 and L2 and removed, it is possible toperform a clean penetrating process producing no residue. Furthermore,since the film 4 is processed at high speed by irradiation with laserlight L1 having a high energy density to a predetermined depth andthereafter processed slowly by laser light L2 having a lowered energydensity, it is possible to efficiently process only film 4 whilesuppressing a damage to the anode electrode 2R.

The abovementioned second step may be performed in the following manner.That is, while the TFT substrate 1 is step-moved in a predetermineddirection, the anode electrode 2R portion for R is irradiated with laserlights L1 and L2 via a microlens array having a plurality of microlensesarranged in a single row in a direction intersecting the movingdirection of the TFT substrate 1, to form the opening pattern 6 in thefilm 4. As an alternative, while the TFT substrate 1 is step-moved in atwo-dimensional direction in a plane parallel to a substrate surface,the film 4 may be irradiated with laser lights L1 and L2 to form theopening pattern 6 in the film 4. As an alternative, the film 4 may beirradiated with laser lights L1 and L2 via a microlens array having aplurality of microlenses provided so as to correspond to a plurality ofanode electrodes 2R of the TFT substrate 1, to form opening patterns 6in the film 4 by a single irradiation. As another alternative, laserlight L1 or L2 having an elongated shape may be produced by acylindrical lens, and a stripe-shaped opening pattern 6 may be formed inthe film 4, to thereby make a R organic EL layer 3R in a striped pattern(thin film pattern).

FIGS. 2A to 2C are cross-sectional views illustrating a modified exampleof the first embodiment of the method for producing the deposition maskof the present invention, and in particular, illustrating a process forforming the opening pattern.

According to the method, first, as illustrated in FIG. 2A, an anodeelectrode 2R portion for R on the TFT substrate 1 is irradiated withlaser light L1 having an energy density of from 1 J/cm² to 20 J/cm² todig the portion of the film 4 to a predetermined depth to form a hole 5,and thereafter, as illustrated in FIG. 2B, in an atmosphere of reactivegas 8 that reacts with carbon of the film 4 and evaporates carbon, abottom portion of the hole 5 is irradiated with laser light L2 having alowered energy density of 0.1 J/cm² or lower, preferably 0.06 J/cm² orlower to slowly process the bottom portion of the hole 5 to make itpenetrate through the film, to form the opening pattern 6 as illustratedin FIG. 2C. In this case, as the reactive gas 8, for example, ozone (O₃)gas or mixed gas of methane tetrafluoride (CF₄) may be employed. In thismethod, even if a spread material due to laser irradiation adheres to asurface of the film 4 or in the opening pattern 6, the reactive gas 8etches and removes the spread material to clean the surface of the anodeelectrode 2R in the opening pattern 6, to thereby enhance adhesion of anorganic EL layer 3 to the anode electrode 2R to improve an yield rate ata time of forming the organic EL layer.

FIGS. 3 A to 3C are cross-sectional views illustrating still modifiedexample of the first embodiment of the method for producing thedeposition mask of the present invention, and in particular,illustrating a process for forming the opening pattern.

According to this method, first, as illustrated in FIG. 3A, for example,the anode electrode 2R portion for R on the TFT substrate 1 isirradiated with, for example, laser light L1 having an energy density ofform 1 J/cm² to 20 J/cm² to dig the portion of the film 4 to apredetermined depth to form a hole 5, and thereafter, irradiation withlaser light L1 is stopped, and subsequently, as illustrated in FIG. 3B,etching of the film 4 is carried out by a reactive gas 8 such as ozone(O₃) gas or mixed gas of methane tetrafluoride (CF₄) and the ozone, thatreacts with carbon of the film 4 and evaporates carbon, to make the hole5 penetrate through the film 4, to thereby form the opening pattern 6having a predetermined shape as illustrated in FIG. 3C.

In this case, it is possible to etch only the film 4 efficiently withoutdamaging the anode electrodes 2R to 2B by making use of an etchselectivity of the reactive gas 8 between the film 4 and the anodeelectrodes 2R to 2B, to form the opening pattern 6. Furthermore, by theetching with the reactive gas 8, it is possible to clean surfaces of theanode electrodes 2R to 2B in the opening pattern 6 to thereby enhanceadhesion of the organic EL layer to the anode electrodes 2R to 2B toimprove an yield rate at a time of forming the organic EL layer.Furthermore, since the hole 5 is processed at high speed by irradiationof laser light L1 having a high energy density and thereafter a bottomportion of the hole 5 is processed slowly by etching to make itpenetrate through the film, it is possible to efficiently process onlythe film 4 while suppressing damage to the anode electrodes 2R to 2Bwithout sacrificing a process time.

Here, the film 4 may be etched by radical ions produced by ionizingoxygen (O₂) gas or mixed gas of carbon tetrafluoride (CF₄) instead ofthe reactive gas 8.

The produced deposition mask includes only the resin film 4 thattransmits visible light and has the opening pattern 6 penetratingthrough the resin film and having the same shape and dimension as thoseof a thin film pattern so as to correspond to a preliminarily determinedforming region of the thin film pattern on the substrate.

In the third step, as illustrated in FIG. 1D, for example, by using avapor deposition apparatus, the R organic EL layer 3R is formed by vapordeposition on the anode electrode 2R for R on the TFT substrate 1through the opening pattern 6 of the deposition mask 7. At this time, byperforming the vapor deposition in a state in which the anode electrodes2G and 2B for G and B are energized to apply a predetermined voltage tothe anode electrodes 2G and 2B, the film-shaped deposition mask 7 isattracted and fixed to the anode electrodes 2G and 2B for G and B byelectrostatic attraction, and thus, there is no possibility that thedeposition mask 7 moves to cause a position error between the openingpattern 6 of the deposition mask 7 and the anode electrode 2R for R onthe TFT substrate 1. Furthermore, since the deposition mask 7 closelycontacts with the surface of the TFT substrate 1, there is nopossibility that a gap is formed between a lower surface of thedeposition mask 7 and the upper surface of the TFT substrate 1.Therefore, it is possible to avoid a problem that vapor depositionmolecules enter and adhere to the gap to deteriorate forming accuracy ofthe thin film pattern.

In the third step, before forming the R organic EL layer 3R, impuritieson the anode electrode 2R for R is preferably removed. The impuritiesinclude residues of, for example, the film 4 abraded in the second step.When the R organic EL layer 3R is vapor-deposited in a state in whichsuch impurities adhere to the surface of the anode electrode 2R for R,the electric resistance of the anode electrode 2R for R rises, and thus,a problem in drive of R organic EL layer 3R may occur. Furthermore, suchimpurities include one which corrodes the organic EL layer, which mayshorten the service life of the organic EL layer.

In order to remove such impurities, etching or laser is used. In a caseof performing the etching, it is preferred to perform dry etching usingO₂ (oxygen), mixed gas of O₂ and Ar (argon), or mixed gas of O₂, Ar andCF₄ (carbon tetrafluoride), and the like, to thereby remove theimpurities. Furthermore, in a case of using laser, it is possible to usea green laser having an energy density of about 0.5 J/cm² and awavelength of 532 nm, a UV laser of 355 nm, a DUV lase of 266 nm, andthe like. In this case, it is preferred to use O₂ (oxygen), mixed gas ofO₂ and Ar (argon), or mixed gas of O₂, Ar and CF₄ (carbontetrafluoride), and the like, as assist gas.

Furthermore, an electrode material is preferably deposited on the anodeelectrode 2R from which the impurities have been removed. Here, theelectrode material means a material for forming the anode electrode andincludes, for example, Al (aluminum), Mg (magnesium).

Such an electrode material is deposited by a method such as sputtering,vacuum vapor deposition, or ion plating, on a surface of the anodeelectrode 2R for R through the opening pattern 6 formed in the film 4.

In the fourth step, as illustrated in FIG. 1E, an edge portion of thedeposition mask 7 is lifted upwardly to mechanically detach thedeposition mask 7 from the surface of the TFT substrate 1. In this step,an R organic EL layer 3R remains on the anode electrode 2R for R, andthus, the step of forming an R organic EL layer is completed. In thiscase, the thickness of the deposition mask 7 is from about 10 μm to 30μm, while the thickness of the R organic EL layer is about 100 nm. Thethickness of the R organic layer 3R adhering to a side wall of theopening pattern 6 of the deposition mask 7 is extremely small, and thus,the deposition mask 7 is easily separated from the R organic EL layer 3Ron the anode electrode 2R for R. Accordingly, there is no possibilitythat the R organic layer 3R on the anode electrode 2R for R is detachedat the time of detaching the deposition mask 7. Here, in the case inwhich the deposition mask 7 is electrostatically attracted on to thesurface of the TFT substrate 1 by applying a voltage to the anodeelectrodes 2G and 2B for G and B, at the time of detaching thedeposition mask, it is preferred to turn off the applied voltages to theanode electrodes 2G and 2B or to apply a voltage of opposite polarity tothe electrodes. Therefore, it is possible to easily detach thedeposition mask 7. Furthermore, in a case of making the film 4 adhere tothe surface of the TFT substrate 1 by an adhesive, it is preferred toapply to the deposition mask 7 a force greater than the adhesion powerof the adhesive to mechanically detach the deposition mask 7.Furthermore, if the adhesive is one curable by UV irradiation, it ispreferred to perform UV irradiation to cure the adhesive to lower theadhesion between the deposition mask 7 and the surface of the TFTsubstrate 1 before detaching the deposition mask 7.

Thereafter, in the same manner as above, on the anode electrodes 2G and2B for G and B, organic EL layers 3G and 3B for those colors are formed.Thereafter, a transparent electrically conductive film of ITO (indiumtin oxide) is formed on the TFT substrate 1 and a transparent protectivesubstrate is bonded thereon to form an organic EL display device.

Here, in the first embodiment of the method for forming a thin filmpattern, explanation has been made with respect to a case in which thefilm 4 is formed in a sheet shape, but the present invention is notlimited thereto, and the film 4 may be a liquid film so long as laserabrasion to the material is possible. In this case, the film 4 is formedby spin-coating or dip-coating a surface of the TFT substrate 1 with aliquid material and drying the material.

Furthermore, in the first embodiment of the method for forming a thinfilm pattern, at a time of forming the organic EL layer 3R in the thirdstep, a further transparent electrode layer may be formed on the organicEL layer 3R. In this case, when the film 4 is a liquid film, thetransparent electrode layer functions as a barrier layer and it ispossible to prevent the organic EL layer 3R from being dissolved by thefilm 4 in the liquid form.

Next, a second embodiment of the method for forming a thin film patternof the present invention will be explained. Here, in the same manner asthe above, explanation will be made with respect to a method forproducing an organic EL display device by the second embodiment of themethod for forming a thin film pattern in which the thin film pattern isan organic EL layer. In this method for producing an organic EL displaydevice, the organic EL display device is produced by forming organic ELlayer having a corresponding color on anode electrodes formed on the TFTsubstrate 1, and the method includes a process for forming a red (R)organic EL layer, a process for forming a green (G) organic EL layer, aprocess for forming a blue (B) organic EL layer, and a process forforming cathode electrodes.

FIGS. 4A to 4G are cross-sectional views illustrating the process forforming an R organic EL layer. In this process for forming an R organicEL layer, an organic material is heated in vacuum to form an R organicEL layer 3R by vapor deposition on an anode electrode 2R for R on theTFT substrate 1. The process includes a first step (refer to FIG. 4A) ofretaining a film 4 made of a resin, that transmits visible light, on ametal member having an opening 9 having a shape and a size greater thanthose of a pattern of the R organic EL layer 3R, to form a maskingmember 11; a second step (refer to FIG. 4B) of placing the TFT substrate1 on a magnetic chuck stage 13 having a static magnetic field generationdevice 12 provided therein as a chucking device; a third step (refer toFIG. 4C) of aligning and placing the masking member 11 onto the TFTsubstrate 1 so that the anode electrode 2R for R on the TFT substrate 1is aligned in the opening 9 of the metal member 10; a fourth step (referto FIG. 4D) of attracting the metal member 10 onto the TFT substrate 1by the static magnetic field generated by the static magnetic fieldgeneration device 12 so as to bring the film 4 into close contact withthe surface of the TFT substrate 1; a fifth step (refer to FIG. 4E) ofirradiating a portion of the film 4 corresponding to the anode electrode2R for R on the TFT substrate 1 with laser light L to form in the film 4the opening pattern 6 having the same shape and dimension as those of apattern of the R organic EL layer 3R, to form a deposition maskaccording to a second embodiment of the present invention (hereinafterreferred to as “deposition mask 14”); a sixth step (refer to FIG. 4F) offorming the R organic EL layer 3R on the anode electrode 2R for R on theTFT substrate 1 by vapor deposition through the opening pattern 6 of thedeposition mask 14; and a seventh step (refer to FIG. 4G) of lifting thedeposition mask 14 in the arrow +Z direction in FIG. 4G to detach thefilm 4 from the surface of the TFT substrate 1.

In more detail, first, in the first step, in a metal member 10 having athickness of about from 15 μm to 50 μm made of a magnetic material suchas nickel, a nickel alloy, an invar or an invar alloy, a plurality ofelongated openings 9 are formed in parallel by etching or by punching sothat the pitch of the openings 9 is the same as the arrangement pitch ofa plurality of rows of the anode electrodes 2R for R on the TFTsubstrate 1 and that a dimension of each opening 9 is sufficient forcompletely including each of anode electrodes for R arranged in each rowas illustrated in FIG. 5A. Thereafter, as illustrated in FIG. 5B beingan A-A cross-sectional view of FIG. 5A, a film 4 of, for example,polyethylene terephthalate (PET) or polyimide, to which laser abrasionis possible, having a thickness of, for example, from 10 μm to 30 μm isbonded to a surface of the metal member 10 via e.g. an adhesive.Subsequently, as illustrated in FIG. 5C with partial enlargement, thefilm 4 is e.g. dry-etched from the metal member 10 side to reduce thethickness of a portion of the film 4 corresponding to such an opening 9to be about a few microns to form a masking member 11. Accordingly, itis possible to form a fine opening pattern with high accuracy. Here, theetching of the film 4 may be performed from a side opposite to the metalmember 10, or it may be performed from both sides. Furthermore, theetching of the film 4 is not necessarily a dry etching but it may be awet etching. Furthermore, the metal member 10 may be formed by platingon a region of one surface of the film 4 outside a region correspondingto the opening 9.

Next, in the second step, as illustrated in FIG. 4B, on the magneticchuck stage 13 having, for example, a permanent magnet as the staticmagnetic field generation device 12 provided in the magnetic chuck stage13, the TFT substrate 1 is placed so that its surface on which anodeelectrodes 2R, 2G and 2B are formed is on the upper side. In this case,the magnetic chuck stage 13 is formed to have a smooth chucking surface,for example. Here, the static magnetic field generation device 12 isconfigured to be moved up and down by an elevating device, notillustrated, and in the second step, the static magnetic fieldgeneration device 12 is at a lowered position at a bottom portion of themagnetic chuck stage 13.

Subsequently, in the third step, as illustrated in FIG. 4C, the maskingmember 11 is placed on the TFT substrate 1 so that a film 4 of themasking member 11 faces to the TFT substrate 1, and thereafter, whilethe anode electrode 2R for R of the TFT substrate 1 and the opening 9 ofthe metal member 10 are observed through a microscope, for example, themasking member 11 is moved and rotated in two-dimensional directions ina plane in parallel to an upper surface of the magnetic chuck stage 13to align them so that a plurality of the anode electrodes 2R for R arein the opening 9 of the metal member 10. At this time, since the staticmagnetic field generation device 12 is at a lowered position at a bottomportion of the magnetic chuck stage 13, the strength of the magneticfield influenced on the metal member 10 is low. Accordingly, the maskingmember 11 can be moved freely on the surface of the TFT substrate 1.Here, a recessed portion is formed on the upper surface of the magneticchuck stage 13 so as to allow receiving and positioning the TFTsubstrate 1 in the recessed portion, positioning pins are providedoutside the recessed portion, and positioning holes is formed in themetal member 10 so as to correspond to the positioning pins. It ispossible to align the TFT substrate 1 and the masking member 11 only byfitting the positioning holes to the positioning pins.

Subsequently, in the fourth step, as illustrated in FIG. 4D, the staticmagnetic field generation device 12 is moved up to an upper portion ofthe magnetic chuck stage 13 to make the static magnetic field influenceon the metal member 10 to attract the metal member 10 toward the TFTsubstrate 1 side to thereby bring the film 4 into close contact with theupper surface of the TFT substrate 1.

Next, in the fifth step, as illustrated in FIG. 4E, laser light L isirradiated toward the anode electrodes 2R for R on the TFT substrate 1to form, in the film 4 on the anode electrodes 2R, the opening pattern 6having a shape and a dimension approximately equal to those of the anodeelectrodes 2R for R to form the deposition mask 14 (second embodiment).The laser used in this step is an excimer laser having a wavelength of400 nm or shorter, and for example, a laser of KrF 248 nm. By lightenergy of such laser light L of ultraviolet rays, carbon bonds inpolyethylene terephthalate (PET) or polyimide are instantaneouslydestroyed and removed, and accordingly, it is possible to perform cleanpenetrating process while suppressing generation of residues. In thiscase, since no thermal process by irradiation of the laser light L isused, it is possible to form a penetrating pattern having a shape and adimension approximately the same as those of the cross-section of lightflux of the laser light L, and by using a reduction imaging device, itis possible to form even the deposition mask 14 having the openingpattern 6 of a few microns. Accordingly, it is possible to form a finerthin film pattern than conventional patterns.

FIG. 9 is a front view illustrating a construction example of a laserprocessing apparatus to be employed in the fifth step.

This laser processing apparatus is configured to scan the TFT substrate1 in the direction indicated by an arrow X in FIG. 9 at a constant speedand meanwhile to irradiate the masking member 11 on the TFT substrate 1with laser light L to form the opening pattern 6 having a shape and adimension approximately equal to those of the patterns of organic ELlayers 3R to 3B, on anode electrodes 2R to 2B, to thereby form thedeposition mask 14, and the laser processing apparatus includes ascanning device 15, a laser optical unit 16, an image-capturing device17, an alignment device 18 and a control device 19.

The scanning device 15 has a stage 20 having a plurality of air-ejectingholes and air-drawing holes formed on an upper surface thereof, and theTFT substrate 1 and a magnet chuck stage 13, that are integratedtogether, are placed on the upper surface of the stage 20. A scanningmechanism, not illustrated in the drawings, is configured to hold edgeportions of the magnetic chuck stage 13 parallel to the arrow Xdirection and to scan the TFT substrate 1 and the magnetic chuck stage13, in a state in which they are lifted off the stage 20 by apredetermined amount by balancing an ejection force and a suction forceof the air.

Above the scanning device, a laser optical unit 16 is provided. Thislaser optical unit 16 is configured to irradiate the selected anodeelectrodes 2R to 2B on the TFT substrate 1 with laser light L ofultraviolet rays. The laser optical unit 16 includes an excimer laser 21for radiating laser light L of KrF 248 nm, for example; a couplingoptical unit 22 for expanding a light flux diameter of laser light L,unifying the intensity distribution to produce parallel light, andirradiating a photomask 23 to be described later with the parallellight; and the photomask 23 disposed so as to face to an upper surfaceof the stage 20 and having a plurality of openings 24 (refer to FIGS.10A and 10B) formed in a direction intersecting an arrow X direction.

Here, the photomask 23 will be described in detail. The photomask 23 is,for example, as illustrated in FIGS. 10A and 10B, a transparentsubstrate 25 having one surface provided with a light-shielding film 26of e.g. chromium (Cr), the film has openings 24 formed in a row in adirection intersecting the arrow X direction of the TFT substrate 1 atan arrangement pitch 3P that is three times the arrangement pitch P ofthe anode electrodes 2R to 2B, and the other surface of the transparentsubstrate 25 is provided with a plurality of microlenses 27 formed sothat their central axes agree with centers of respective openings 24, sothat the microlenses 27 perform reduction projection of respectiveopenings 24 on to the TFT substrate 1. In this case, the size of eachopening 24 is M times the pattern size of the organic EL layers 3R to 3Bwhen the reduction rate of the microlens 27 is M. Here, in FIG. 10A, ahatched region is a region to be irradiated with laser light L.

Furthermore, at a position a predetermined distance from the center ofthe plurality of openings 24 in a direction opposite to the arrow Xdirection, there is formed an elongated observation window 28 having alongitudinal central axis in direction intersecting the arrow Xdirection. This observation window 28 allows image-capturing of asurface of the TFT substrate 1 passing under the photomask 23 by animage-capturing device 17, to be described later, from a position abovethe photomask 23. In the observation window 28, at least one alignmentmark 29 (only one alignment mark in this example) having a fine lineextending in the arrow X direction is provided so that its longitudinalcentral axis agrees with the center of any one of the openings 24.

Above the scanning device 15, the image-capturing device 17 is provided.This image-capturing device 17 is provided for capturing an image of thesurface of the TFT substrate 1 through the observation window 28 of thephotomask 23, and the image-capturing device 17 is a line camera havinga plurality of light-receiving elements arranged in a row in a directionintersecting the arrow X direction. The plurality of light-receivingelements is arranged so that their central axis in the arrangementdirection agrees with the longitudinal central axis of the observationwindow 28 of the photomask 23. Furthermore, an illumination device, notillustrated, is provided so that the image-capturing region of theimage-capturing device 17 can be illuminated from the upper side of theTFT substrate 1. Here, in FIG. 9, a symbol 30 indicates a reflectivemirror for folding an optical path of the image capturing system.

The alignment device 18 is provided so that the photomask 23 is movablein a direction intersecting the arrow X direction in a plane parallel tothe upper surface of the stage 20. This alignment device 18 is providedfor aligning the photomask 23 to the TFT substrate 1 that is scanning,and is configured to move the photomask 23 in the direction intersectingthe arrow X direction by a moving mechanism including an electromagneticactuator, a motor, and the like.

A control device 19 is provided, which is electrically connected to thescanning device 15, the excimer laser 21, the image-capturing device 17and the alignment device 18. This control device 19 controls thescanning device 15 to scan the TFT substrate 1 in the arrow X directionat a constant speed, controls the excimer laser 21 to emit light atregular intervals, processes an image imported from the image-capturingdevice 17 to detect a reference position that has been predetermined onthe TFT substrate 1, computes a horizontal distance between thereference position and the alignment mark 29 of the photomask 23, andcontrols the alignment device 18 to move the photomask 23 so that thehorizontal distance becomes the predetermined distance.

By using the laser processing apparatus having such a configuration, thestep 5 is performed in the following manner.

First, on the upper surface of the stage 20 of the scanning device 15,the TFT substrate 1 integrated with the magnetic chuck stage 13 ispositioned and placed so that the longitudinal axis of the opening 9 ofthe metal member 10 is parallel to the arrow X direction. Next, thescanning device 15 lifts the magnetic chuck stage 13 and the TFTsubstrate 1 together by a predetermined amount off the stage 20, and inthis state, starts scan in the arrow X direction at a constant speed asit is controlled by the control device 19.

When the TFT substrate 1 is scanned to a position under the photomask23, and when e.g. an anode electrode 2R to 2B formed on the TFTsubstrate 1 in a direction intersecting the arrow X direction, or a linepattern provided at a predetermined position, is detected by theimage-capturing device 17 through the observation window 28 of thephotomask 23, the control device 19 computes a movement distance of theTFT substrate 1 from the position of the TFT substrate 1 at which theanode electrode 2R to 2B etc. is detected. Then, when the movingdistance becomes a target moving distance predetermined and stored inadvance and the anode electrode 2R for R in the TFT substrate 1 reachesa position right under the opening 24 of the photomask 23, the excimerlaser 21 performs pulse emission as it is controlled by the controldevice 19.

While the TFT substrate 1 is moving, among e.g. a plurality of gatelines parallel to the arrow X direction formed on the TFT substrate 1 inadvance, an edge portion of a preliminarily selected gate line, that isused as a reference of alignment, is detected by the image capturingdevice 17, and the control device 19 computes a horizontal distance fromthe edge portion to the alignment mark 29 of the photomask 23, that isdetected simultaneously, and controls the alignment device 18 to movethe photomask 23 in a direction intersecting the arrow X direction.Accordingly, it is possible to follow and align the photomask 23 to theTFT substrate 1 moving as it is swinging in the direction intersectingthe arrow X direction.

As described above, when the anode electrode 2R for R on the TFTsubstrate 1 reaches a position right under the opening 24 of thephotomask 23, the excimer laser 21 emits light and the irradiationregion of the photomask 23 is irradiated with laser light L.Furthermore, the laser light L passed through the opening 24 of thephotomask 23 is focused on an anode electrode 2R for R on the TFTsubstrate 1 by the microlens 27. Furthermore, the film 4 on the anodeelectrode 2R is abraded and removed by the laser light L, to therebyform the opening pattern 6. Thereafter, every time a subsequent anodeelectrode 2R for R reaches the position right under the opening 24 ofthe photomask 23, the excimer laser 21 emits light, the film 4 on theanode electrode 2R is removed by the laser light L, to thereby form thedeposition mask 14 provided with an opening pattern on the anodeelectrode 2R. Here, the construction may be such that the excimer laser21 continuously emits light and a shutter provided on the output opticalaxis side of the laser light L is configured to open when the anodeelectrode 2R for R reaches a position right under the opening 24 of thephotomask 23.

Here, in the above, explanation has been made with respect to a case inwhich a plurality of openings is provided in a single row in thephotomask 23, but a plurality of such rows of the openings 24 may beprovided in the arrow X direction at a pitch of an integer times thepixel pitch in the direction. In this case, portions of the film 4 onthe anode electrodes 2R for R are removed by a plurality of laserirradiations.

Furthermore, in the above, explanation has been made with respect to acase in which the microlenses 27 are provided so as to correspond to theplurality of openings 24, but cylindrical lenses each having alongitudinal axis spanning a plurality of openings 24 may be employed.In this case, the plurality of openings 24 is preferably continued toform a single stripe-shaped opening. In this construction, it ispossible produce laser light L having an elongated light fluxcross-section to form a stripe-shaped opening pattern 6 in the film 4.Here, in this case, the TFT substrate 1 is placed on the stage 20 sothat the longitudinal axis of the opening 9 of the masking member 11intersects the arrow X, and scanned. Then, every time a plurality ofanode electrodes 2R for R reach the position right under thestripe-shaped opening 24 of the photomask 23, irradiation with theelongated laser light L takes place, so that the stripe-shaped openingpattern 6 can be formed to cover the plurality of anode electrodes 2Rfor R. As a result, it is possible to form a stripe-shaped R organic ELlayer 3R (thin film pattern) on a plurality of anode electrodes 2R for Rso as to span these electrodes.

Furthermore, explanation has been made with respect to a case in whichthe laser processing apparatus performs irradiation with laser light Lwhile moving the TFT substrate 1 at a constant speed to form the openingpattern 6 in the film 4, but the present invention is not limitedthereto, and the laser processing apparatus may be one configured toperform irradiation with laser light L while moving the TFT substrate 1in a step movement in the arrow X direction or while moving the TFTsubstrate 1 in two-dimensional directions in a plane parallel to thesubstrate surface to form the opening pattern 6 in the film 4, or may beone configured to irradiate the TFT substrate 1 with laser light Lthrough a photomask 23 provided with a plurality of microlenses so as tocorrespond to a plurality of anode electrodes of the TFT substrate 1, toform opening patterns 6 in the film 4 by one-shot irradiation.

Furthermore, in the formation of the opening pattern 6, in the samemanner as described above, processing up to a predetermined depth ispreferably performed rapidly by irradiation with laser light L having arelatively high energy density of form 1 J/cm² to 20 J/cm², andprocessing of the rest portion is performed slowly by irradiation withlaser light L having a lowered energy density of 0.1 J/cm² or lower,preferably 0.06 J/cm² or lower. Accordingly, it is possible to shorten atime to form the opening pattern 6 while suppressing damage to the anodeelectrodes due to the laser light L.

In the sixth step, as illustrated in FIG. 4F, by using e.g. a vacuumvapor deposition apparatus, an R organic EL layer 3R is formed on ananode electrode 2R for R on the TFT substrate 1 by vapor depositionthrough the opening pattern 6 of the deposition mask 14. Furthermore, onthe organic EL layer 3R for R, a transparent electrode layer 31 made ofan ITO film is deposited by using a known deposition technique such asvapor deposition or sputtering.

In the seventh step, as illustrated in FIG. 4G, in a state in which thestatic magnetic field generation device 12 of the magnetic chuck stage13 is lowered, an edge portion of the deposition mask 14 is lifted up inthe direction indicated by an arrow +Z to mechanically detach the film 4of the deposition mask 14 from the surface of the TFT substrate 1. Thus,the R organic EL layer 3R remains on the anode electrode 2R for R, andthe process for forming an R organic layer is completed.

FIGS. 6A to 6G are cross-sectional explanation views illustrating aprocess for forming a G organic EL layer. This process for forming the Gorganic EL layer includes a step (refer to FIG. 6A) of retaining thefilm 4, that is made of a resin and transmits visible light, by themetal member 10 containing a magnetic material and having the opening 9having a shape and dimension greater than those of a pattern of the Gorganic EL layer 3G; a step (refer to FIG. 6B) of placing the TFTsubstrate 1 on the magnetic chuck stage 13 provided with the staticmagnetic field generation device 12; a step (refer to FIG. 6C) ofaligning and placing the metal member 10 on the TFT substrate 1 so thatan anode electrode 2G for G on the TFT substrate 1 is positioned in theopening 9 of the metal member 10; a step (refer to FIG. 6D) ofattracting the metal member 10 on to the TFT substrate 1 by a staticmagnetic field of the static magnetic field generation device 12 so thatthe film 4 is brought into close contact with an upper surface of theTFT substrate 1; a step (refer to FIG. 6E) of irradiating with laserlight L a portion of the film 4 corresponding to the anode electrode 2Gfor G on the TFT substrate 1, to form in the portion of the film 4 theopening pattern 6 having the same shape and dimension as those of apattern of a G organic EL layer 3G, to thereby form the deposition mask14; a step (refer to FIG. 6F) of forming a G organic EL layer 3G on theanode electrode 2G for G on the TFT substrate 1 by deposition throughthe opening pattern 6 of the deposition mask 14; and a step (refer toFIG. 6G) of lifting up the deposition mask 14 in the direction indicatedby an arrow +Z in FIG. 6G to mechanically detach the deposition mask 14.This process is performed in the same manner as the process for formingthe R organic EL layer.

FIGS. 7A to 7G are cross-sectional explanation views illustrating aprocess for forming a B organic EL layer. This process for forming a Borganic EL layer includes a step (refer to FIG. 7A) of retaining thefilm 4, that is made of a resin and transmits visible light, by themetal member 10 containing a magnetic material and having the opening 9having a shape and dimension greater than those of a pattern of the Borganic EL layer 3B; a step (refer to FIG. 7B) of placing the TFTsubstrate 1 on the magnetic chuck stage 13 provided with the staticmagnetic field generation device 12; a step (refer to FIG. 7C) ofaligning and placing the metal member 10 on the TFT substrate 1 so thatan anode electrode 2B for B on the TFT substrate 1 is positioned in theopening 9 of the metal member 10; a step (refer to FIG. 7D) ofattracting the metal member 10 on to the TFT substrate 1 by a staticmagnetic field of the static magnetic field generation device 12 so thatthe film 4 is brought into close contact with an upper surface of theTFT substrate 1; a step (refer to FIG. 7E) of irradiating with laserlight L a portion of the film 4 corresponding to the anode electrode 2Bfor B on the TFT substrate 1, to form in the portion of the film 4 theopening pattern 6 having the same shape and dimension as those of apattern of a B organic EL layer 3B, to thereby form the deposition mask14; a step (refer to FIG. 7F) of forming a B organic EL layer 3B on theanode electrode 2B for B on the TFT substrate 1 by vapor depositionthrough the opening pattern 6 of the deposition mask 14; and a step(refer to FIG. 7G) of lifting up the deposition mask 14 in the directionindicated by an arrow +Z in FIG. 7G to mechanically detach thedeposition mask 14. This process is performed in the same manner as theprocess for forming the R organic EL layer or the G organic layer.

FIGS. 8A to 8D are cross-sectional explanation views illustrating aprocess for forming a cathode electrode. This process for forming acathode electrode is a process for electrically connecting the organicEL layers 3R, 3G and 3B formed on the anode electrodes 2R, 2B and 2G onthe TFT substrate 1, and as illustrated in FIGS. 8 A to 8D, first, byusing a known deposition technique, a cathode electrode 32 (transparentelectrode) made of an ITO (indium tin oxide) film is formed to cover theupper surface of the TFT substrate (refer to FIG. 8A). Subsequently, aprotection layer 33 having an insulation property is formed bydeposition to cover the cathode electrode 32 (refer to FIG. 8B), andfurther on the cathode electrode 32, e.g. a UV curable resin is e.g.spin-coated or spray-applied to form a bonding layer 34 (refer to FIG.8C). Then, after the a transparent opposing substrate 35 is brought intoclose contact on the bonding layer 34, ultraviolet rays are radiatedform the opposing substrate 35 side to cure the bonding layer 34 to jointhe opposing substrate 35 to the TFT substrate 1 (refer to FIG. 8D).Thus, an organic EL display device is completed.

FIGS. 11A to 11G are cross-sectional explanation views illustrating amodified example of the method for producing a deposition mask to beused in the process for forming an organic EL layer. Here, as anexample, a method for producing a deposition mask for R organic EL layerwill be described.

First, as illustrated in FIG. 11A, a transparent member 36 made of e.g.a fluororesin or a cover glass, that transmits visible light and hardlyabsorbs laser light L, is placed so as to cover the upper surface of theTFT substrate 1 placed on the magnetic chuck stage 13.

Next, as illustrated in FIG. 11B, the metal member 10 aligned to the TFTsubstrate 1 so that an anode electrode 2R is positioned in the opening 9of the metal member 10, and thereafter, the film 4 of the masking member11 is brought into close contact on the transparent member 36. Then, inthis state, as illustrated in FIG. 11C, the metal member 10 is attractedby a static magnetic field of the chuck stage 13 to sandwich the film 4and the transparent member 36 between the metal member 10 and the TFTsubstrate 1.

Subsequently, as illustrated in FIG. 11D, a portion of the film 4corresponding to the anode electrode 2R for R on the TFT substrate 1 isirradiated with laser light L, to form the opening pattern 6 having thesame shape and dimension as those of a pattern of an R organic EL layer3R in the portion of the film 4, to form the deposition mask 14. At thistime, the transparent member 36 is not processed by laser since it doesnot absorb laser light L.

Subsequently, as illustrated in FIG. 11E, on the deposition mask 14,e.g. an electrostatic chuck stage 37 configured to be capable ofapplying a predetermined voltage is placed, the film 4 of the depositionmask 14 is attracted by the electrostatic chuck stage 37, and the staticmagnetic field of the magnetic chuck stage 13 is turned off. Thereafter,in a state in which the deposition mask 14 is attracted to theelectrostatic chuck stage 37, the electrostatic chuck stage 37 isvertically lifted in the arrow +Z direction to thereby pull off thetransparent member 36 in the direction of an arrow Y shown in FIG. 11E.

Thereafter, as illustrated in FIG. 11F, the electrostatic chuck 37 ismoved down vertically in the arrow Z direction to place the depositionmask 14 on the TFT substrate 1 again. Then, the electrostatic chuck 37is turned off and the magnetic chuck stage 13 is turned on, and asillustrated in FIG. 11G, the metal member 10 of the deposition mask 14is attracted by a magnetic force to bring the film 4 into close contactwith the upper surface of the TFT substrate 1, and thereafter, theelectrostatic chuck 37 is removed. Thus, the method for producing thedeposition mask 14 is completed.

Thereafter, the R organic EL layer 3R is formed in the same manner asFIGS. 4F and 4G by using the above deposition mask. Furthermore, the Gorganic EL layer 3G and the B organic EL layer 3B can be formed by usingmasks formed in the same manner.

As described above, when laser light L is radiated in a state in whichthe transparent member 36 that transmits visible light is interposedbetween the film 4 and the TFT substrate 1, to abrade the film 4 to formthe opening pattern 6, even if a residue of the film 4 is generated bythe abrasion, the residue is completely blocked by the transparentmember 36 and does not adhere to the anode electrodes 2R to 2B.Accordingly, there is no possibility that a contact resistance betweenthe anode electrodes 2R to 2B and the organic EL layers 3R to 3B risesor the residue damages the organic EL layers 3R to 3B to deterioratelight-emission characteristics of the organic EL layers 3R to 3B.

Here, in the above, explanations have been made with respect to a casein which the transparent member 36 is a member that hardly absorbs laserlight L, but the present invention is not limited thereto, and thetransparent member 36 may be a member such as polyimide that easilyabsorbs laser light L so long as it has a sufficient thickness comparedto the thickness of the film 4. In this case, it is sufficient thatirradiation with laser light L is stopped after laser processing to thefilm 4 is completed and before the laser processing to the transparentmember 36 is completed.

Furthermore, in the second embodiment of the process for forming a thinfilm pattern, explanation has been made with respect to a case in whicha transparent electrode layer 31 is further formed on an organic ELlayer 3R to 3B at a time of forming the organic EL layer 3R to 3B.However, the present invention is not limited thereto, and it is notnecessary to form the transparent electrode layer at the time of formingthe organic EL layer 3R to 3B.

Furthermore, in the second embodiment of the process for forming a thinfilm pattern, explanation has been made with respect to a case in whichthe static magnetic field generation means 12 is a permanent magnet, butthe present invention is not limited thereto, and the static magneticfield generation device 12 may be an electromagnet.

Furthermore, in the second embodiment of the process for forming a thinfilm pattern, explanation has been made with respect to a case in whichthe metal member 10 is made of a magnetic material, but the presentinvention is not limited thereto, and the metal member 10 may be anon-magnetic material. In this case, in order to sandwich the film 4between the TFT substrate 1 and the metal member 10, instead of themagnetic chuck stage 13, it is preferred to use an electrostatic chuckstage configured to be capable of applying a predetermined voltage,place the TFT substrate 1 on the electrostatic chuck stage, and apply avoltage to the stage to attract the metal member 10 onto the TFTsubstrate 1 by electromagnetic force to sandwich the film 4.

Furthermore, in the second embodiment of the process for forming a thinfilm pattern, explanation has been made with respect to a case in whichthe film 4 is retained by the metal member 10 via an adhesive, but thepresent invention is not limited thereto, and the film 4 may bethermo-compression bonded to the metal member 10. In this case, when thefilm 4 is a thermoplastic resin, the opening 9 of the metal member 10may be filled with the film 4. As an alternative, the film 4 may be usedas it is sandwiched between the TFT substrate 1 and the metal member 10without bonding the film 4 to the metal member 10.

In the above, explanation has been made with respect to a case in whichthe deposition mask of is produced in the process for forming a thinfilm pattern, but the deposition mask may be produced in a process otherthan the process for forming a thin film pattern.

FIGS. 12A to 12E are process views illustrating a third embodiment ofthe method for producing the deposition mask of the present invention.This method for producing a deposition mask includes a first step offorming the metal member 10; a second step of retaining the resin film 4by bringing it into close contact with the metal member 10; a third stepof bringing the film 4 into close contact with the substrate 38; afourth step of forming a plurality of opening patterns 6 in the film 4;and a fifth step of detaching the metal member 10 and the film 4together from the substrate 38. In this method, a deposition maskillustrated in FIGS. 13A and 13B or FIG. 14 is produced.

Here, the deposition mask includes the film 4 that is made of a resinsuch as polyimide or polyethylene terephthalate (PET) transmittingvisible light and that has the opening pattern 6 penetrating through thefilm 4 and having the same shape and dimension as those of a thin filmpattern so as to correspond to a preliminarily determined forming regionof the thin film pattern on the substrate; and the metal member 10 thathas the opening 9 corresponding to the opening pattern 6 and having ashape and size greater than those of the opening pattern 6 so as tocorrespond to the opening pattern 6, and that closely contacts with onesurface of the film 4. The deposition mask 14 illustrated in FIGS. 13Aand 13B has a plurality of opening patterns 6 arranged in parallel eachhaving an elongated shape, the deposition mask 14 illustrated in FIG. 14has a plurality of rows each including a plurality of opening patterns 6separated from each other by a plurality of bridges 39, and thesedeposition masks are appropriately selected according to the shape of athin film pattern to be formed. In FIGS. 13A, 13B and FIG. 14, a symbol40 indicates a mask-side alignment mark to be aligned to asubstrate-side alignment mark provided on a substrate in advance.

The above first step is, as illustrated in FIG. 12A, a step of formingthrough a thin plate-shaped magnetic material a plurality of openings 9corresponding to a forming region of a thin film pattern and having ashape and size greater than those of the thin film pattern to form ametal member 10.

In more detail, in the first step, the metal member 10 is produced byemploying a thin plate of a magnetic material such as nickel, a nickelalloy, invar or an invar alloy, having a thickness of, for example, formabout 1 μm to a few μm, preferably, from about 30 μm to 50 μm, andforming the opening 9 by wet etching, dry etching such as ion millingusing a resist mask, or by laser processing. In this case, since theopening 9 needs only to be greater in the shape than the opening pattern6 formed in the film 4 in a fourth step to be described later, theforming accuracy of the opening 9 is not required to be such a highaccuracy as that of the opening pattern 6. Here, the shape of theopening 9 is preferably such that it gradually narrows toward the film 4side (its cross-sectional shape is a reversed trapezoid). With such ashape, a deposition material is not blocked at an edge portion of theopening 9 at a time of deposition, and it is possible to form the thinfilm pattern with a uniform film thickness.

The abovementioned second step is, as illustrated in FIG. 12B, a step offorming a masking member while the film 4, that is made of a resintransmitting visible light, is brought into close contact with onesurface of the metal member 10, and in this example, the second step isperformed while the film 4 is thermocompression-bonded to the metalmember 10.

The second step includes, as illustrated in more detail in FIG. 15A, astep of placing the metal member 10 on an upper surface of a film 4 thatis brought into close contact on a substrate 41 of e.g. a plate-shapedglass and that transmits visible light, or a film 4 having a surfaceapplied with fusion bonding treatment; a step, as illustrated in FIG.15B, of thermocompression-bonding the metal member 10 on an uppersurface of the film 4 under a predetermined temperature and pressure tointegrate them; and a step, as illustrated in FIG. 15C, of detaching thefilm 4 from the surface of the substrate 41. In this case, since torsionor warp of the metal member 10 is restricted by the film 4, the shapeand the position of the opening 9 of the metal member 10 is maintained.

This second step is preferably performed in a state in which fourcorners of the metal member 10 are grabbed and pulled outwardly to applya predetermined tension to the metal member 10. As an alternative, thesecond step may be performed in a state in which the metal member 10made of a magnetic material is attracted to a flat surface of a magneticchuck by a magnetic force, or may be performed while these process areappropriately combined. Here, the above magnetic chuck may be one havinga permanent magnet, but is preferably one having an electromagnet whichcan on and off control of magnetic field generation. Furthermore, thestep of detaching the film 4 from the surface of the substrate 41illustrated in FIG. 15C is preferably performed in a state in whichanother magnetic chuck is placed on the metal member 10 and the metalmember 10 is attracted and retained by a flat chucking surface of themagnetic chuck by a magnetic force. Accordingly, it is possible tomaintain high accuracy of the shape and the position of the opening 9 ofthe metal member 10.

A film material used in this step is preferably a film made of a resinthat can be abraded by irradiation with laser light L of ultravioletrays, such as polyimide or polyethylene terephthalate. Particularly,polyimide is more preferable since it has a linear expansion coefficientof from about 10×10⁻⁶ to about 40×10⁻⁶/° C. that is equal to the linearexpansion coefficient of a metal such as nickel (from about 6×10⁻⁶ toabout 20×10⁻⁶/° C.) within a tolerable range, in a case of using it incombination of the metal member 10 made of a metal material, it ispossible to suppress generation of warp at a time of deposition due tothe difference between these members in thermal expansion coefficient.Furthermore, since a metal such as invar has an extremely small thermalexpansion coefficient (about 2×10⁻⁶/° C. or lower), it is possible torestrict thermal expansion of the deposition mask due to radiation heatat a time of deposition, to thereby maintain position accuracy of theopening pattern 6.

In the above third step, as illustrated in FIG. 12C, while a mask-sidealignment mark 40 (refer to FIGS. 13A, 13B and 14) formed in the metalmember 10 in advance and a substrate-side alignment mark, notillustrated, formed on the substrate 38 in advance, are observed througha microscope, the metal member 10 is aligned to the substrate 38 so thatthese marks have a predetermined positional relationship so that a thinfilm pattern forming region on the substrate 38 placed on a firstmagnetic chuck 42 is positioned in the opening 9 of the metal member 10,and thereafter, the metal member 10 is placed on the substrate 38, andthe metal member 10 is attracted by a magnetic force of the firstmagnetic chuck 42 to thereby bring the film 4 into close contact withthe upper surface of the substrate 38.

In this case, the substrate 38 may be a substrate on which a thin filmpattern is to be formed by deposition, or a reference substrate having areference pattern 43 provided so as to correspond to the thin filmpattern forming region and used as an irradiation target of laser lightL in a fourth step to be described later. When the substrate 38 is asubstrate on which deposition is to be made, subsequent to formation ofthe opening pattern 6 in a fourth step to be described later, depositionmay performed through the opening pattern 6 to form a thin film patternon the substrate 38. Accordingly, it is possible to form a fine thinfilm pattern with high position accuracy.

In the fourth step, as illustrate in FIG. 12D, a portion of the film 4corresponding to a thin film pattern forming region (reference pattern43) in the opening 9 of the metal member 10, is irradiated with laserlight L having an energy density of from 0.1 J/cm² to 20 J/cm² and awavelength of 400 nm or shorter, for example, by using an excimer laserof KrF 248 nm, to form the opening pattern 6 penetrating through thefilm 4 and having the same shape and dimension as those of the thin filmpattern.

In the fifth step, as illustrate in FIG. 12E, a second magnetic chuck 44having a flat chucking surface is placed on the metal member 10, theelectromagnet of the second magnetic chuck 44 is turned on and theelectromagnet of the first magnetic chuck 42 is turned off to attractthe metal member 10 to the second magnetic chuck 44 by a magnetic forceto thereby detach the metal member 10 and the film 4 together from thesubstrate 38, and transfer them to the second chuck 44 side. Thus, theprocess for producing the deposition mask of the present invention iscompleted, and the deposition mask illustrated in FIGS. 13A, 13B and 14is completed. Thereafter, by handling the deposition mask 14 in a statethat the metal member 10 is attracted to the second magnetic chuck 44,the shape and the position of the opening pattern 6 of the depositionmask 14 is maintained, and it is possible to perform subsequentformation of a fine thin film pattern easily.

As another example of forming the masking member, the property of asurface of the film 4 may be modified, and thereafter, the metal member10 may be thermocompression-bonded to the film 4 to integrate the metalmember 10 and the film 4 together. As the surface modificationtreatment, there is a method of etching a surface of the film 4 to formhydrophilic groups such as carboxyl groups (—COOH) or carbonyl groups(—CO—) on the surface. By this method, it becomes possible to bond thefilm 4 and the metal member 10 by chemical bond at the interface betweenthese members. As an alternative, for example, a silane coupling agentand the like may be applied to the interface between the film 4 and themetal member 10, thereby forming silanol groups (SiOH) to improvewettability, and making hydrogen bonds, that are formed at the interfacebetween the film 4 and the metal member 10, undergo further dehydrationcondensation. Accordingly, it becomes possible to achieve more stablebonding by chemical bond. As still another alternative, it is alsopossible to perform a plasma treatment of a surface of the film 4 inatmospheric pressure plasma or in reduced-pressure plasma, or to performwet etching of the surface of the film 4 with an alkaline solution tothereby modify the property of the surface of the film 4.

FIGS. 16A to 16C are explanation views illustrating still anotherformation example of the masking member.

This formation example includes: a step illustrated in FIG. 16A ofplacing the metal member 10 on an upper surface of the film 4 closely incontact on the substrate 41 of a flat plate-shaped glass and the like; astep illustrated in FIG. 16B of applying a curable resin 45, thattransmits visible light, in an opening 9 of the metal member 10, andcuring the curable resin 45 to integrate the metal member 10 with thefilm 4; a step illustrated in FIG. 16C of attracting the metal member 10to a flat chucking surface of a magnetic chuck, not illustrated, todetach the film 4 from the surface of the substrate 41. The curableresin 45 used in this step is preferably, for example, a UV-curable orphoto-curable resin containing no solvent or extremely small amount ofsolvent.

FIGS. 17A to 17C are explanation views illustrating still anotherformation example of the masking member.

This formation example includes: a step illustrated in FIG. 17A offorming a metal film 46 of, for example, copper on one surface of thefilm 4, that is electrostatically attracted to a non-illustratedelectrostatic chuck having a flat surface, by deposition by using aknown deposition technique such as sputtering or plating; a stepillustrated in FIG. 17B of applying a non-flux solder 47 on the metalfilm 46; and a step illustrated in FIG. 17C of soldering the metal film46 to the metal member 10 by the non-flux solder 47 to bond the film 4to the metal member 10. In the case of bonding by the non-flux solder47, there is no possibility that impurity gas is generated at a time ofdeposition. Accordingly, for example, at a time of forming an organic ELlight emission layer by deposition, it is possible to solve a problemthat the organic EL light emission layer is damaged by the impurity gas.

FIGS. 18A to 18C are explanation views illustrating still anotherformation example of the masking member.

This formation example includes: a step illustrated in FIG. 18A ofspin-coating or dip-coating the substrate 41 of, for example, glasshaving a flat surface with a resin solution 48 such as polyimide to havea thickness of, for example, about 30 μm, and thereafter, heating theresin solution 48 into a half-dry state; a step illustrated in FIG. 18Bof compression-bonding the metal member 10 on to the resin in half-drystate, and thereafter, drying the resin to form the film 4 retained bythe metal member 10; and a step illustrated in FIG. 18C of attractingthe metal member 10 to, for example, a flat chucking surface of amagnetic chuck, not illustrated, to detach the film 4 from the surfaceof the substrate 41.

Here, the above half-dry state of the resin solution 48 can be achievedby appropriately adjusting heating temperature and heating time, and theheating conditions are determined in advance by experiment. Furthermore,in the same manner, conditions for completely drying the resin are alsodetermined in advance.

FIGS. 19A to 19D are explanation views illustrating still anotherformation example of the masking member.

This formation example includes: a step illustrated in FIG. 19A ofspin-coating or dip-coating the substrate 41 of, for example, glass witha resin solution 48 such as a photoresist or a photosensitive polyimideto have a thickness of about 30 μm; a step illustrated in FIG. 19B ofexposing the photosensitive resin by using a photomask, and thereafter,performing development to form a projecting pattern 49 at a positioncorresponding to the opening 9 of the metal member 10; a stepillustrated in FIG. 19C of compression-bonding the metal member 10 on tothe photosensitive resin in a state in which the opening 9 of the metalmember 10 is aligned to the projecting pattern 49, and thereafter,performing drying by heating at a predetermined temperature to form thefilm 4 retained by the metal member 10; and a step illustrated in FIG.19D of attracting the metal member 10 to, for example, a flat chuckingsurface of a magnetic chuck, not illustrated, to detach the film 4 fromthe surface of the substrate 41.

In this case, by forming the projecting pattern 49 to have a trapezoidalvertical cross-sectional shape having a narrow top portion and a widebottom portion, it is possible to easily fit the opening 9 of the metalmember 10 to the projecting pattern 49 by using a side face of theprojecting pattern 49 as a guide. Furthermore, since the opening 9 ofthe metal member 10 is positioned and restricted by the projectingpattern 49, it is possible to improve the position accuracy of theopening 9 of the metal member 10 from the case of FIGS. 17A to 17C.

FIGS. 20A to 20C are explanation views illustrating still anotherformation example of the masking member.

This formation example includes: a step illustrated in FIG. 20A ofplacing the metal member 10 on an upper surface of a flat plate-shapedsubstrate 41; a step illustrated in FIG. 20B of coating an upper surfaceof the metal member 10 with a resin solution 48 such as polyimide with athickness greater than the thickness of the metal member 10, andthereafter, performing heating at a predetermined temperature to dry theresin solution to form the film 4 retained by the metal member 10; and astep illustrated in FIG. 20C of attracting the metal member 10 to, forexample, a flat chucking surface of a magnetic chuck, not illustrated,to detach the film 4 from the surface of the substrate 41.

In this case, the steps illustrated in FIGS. 20A and 20B are preferablyperformed in state in which the metal member 10 is placed on a flatchucking surface of another magnetic chuck so that the metal member 10is attracted and retained by a magnetic force of the magnetic chuck.Accordingly, it is possible to maintain the shape and the position ofthe opening 9 with high accuracy.

FIGS. 21A to 21D are explanation views illustrating still anotherformation example of the masking member.

This formation example includes: a step illustrated in FIG. 21A ofspin-coating or dip-coating an upper surface of a flat plate-shapedmetal substrate 50 made of, for example, a stainless-steel with a resinsolution 48 such as a photoresist or a photosensitive polyimide to havea thickness of about 30 μm; a step illustrated in FIG. 21B of exposingthe photosensitive resin by using a photomask, and thereafter,performing development to form an island pattern 51 (corresponding tofilm 4) so as to correspond to the openings 9 of the metal member 10; astep illustrated in FIG. 21C of plating a surrounding region of theisland pattern 51 to form a magnetic film of, for example, nickel or anickel alloy having a thickness of about 30 μm to thereby form the metalmember 10; and a step illustrated in FIG. 21D of attracting the metalmember 10 to, for example, a flat chucking surface of a magnetic chuck,not illustrated, to detach the metal member 10 and the island pattern 51(film 4) together from the surface of the metal substrate 50.

In this case, since the metal member 10 is produced by forming themagnetic film in the surrounding region of the island pattern 51 (film4) made of a resin and formed by using a photolithography technique, itis possible to form the opening 9 of the metal member 10 with highaccuracy.

FIGS. 22A to 24C are explanation views illustrating still another methodfor producing the deposition mask (second embodiment) of the presentinvention. Explanation will be made with reference to the views.

First, as illustrated in FIG. 22A, in a state in which the film 4 of,for example, polyimide having a thickness of about from 10 μm to 30 μmthat transmits visible light and that is, for example, attracted andretained on a non-illustrated stage having a flat surface, a surface 4 aof the film 4 is coated with an underlayer 52 that is a metal film of amagnetic material such as nickel having a thickness of about 50 nm by aknown deposition technique such as sputtering as illustrated in FIG.22B. In this case, the underlayer 52 is not limited to a metal film of amagnetic material, but it may be a metal film of a non-magnetic materialhaving high electric conductivity.

Next, as illustrated in FIG. 22C, a resist 53 (photo sensitive material)having a thickness of about 30 μm is applied on the underlayer 52 by,for example, spin-coating.

Next, as illustrated in FIG. 22D, exposure is performed by using aphotomask 54, and development is performed as illustrated in FIG. 22E toform an island pattern 51 of the resist 53 having a shape greater thanthat of a thin film pattern in a portion corresponding to a thin filmpattern forming region of a substrate (such as a TFT substrate). In thiscase, when the resist 53 is of a negative type, the photomask 54 to beused has an opening formed in a portion corresponding to the thin filmpattern forming region on the substrate, and when the resist 53 is of apositive type, the photomask 54 blocks light in a portion correspondingto the thin film pattern forming region on the substrate.

Subsequently, as illustrated in FIG. 22F, a region of the film 4surrounding the island pattern 51 is plated to form the metal member 10made of a magnetic material such as nickel or invar and having athickness of about 30 μm.

Furthermore, as illustrated in FIG. 22G, the island pattern 51 isdetached to form the opening 9 corresponding to the island pattern 51 inthe metal member 10, and thereafter, as illustrated in FIG. 22H, theunderlayer 52 in the opening 9 is etched to be removed, to form themasking member 11. Here, at a predetermined position in the metal member10, the mask-side alignment mark 40 for aligning the mask to thesubstrate is formed.

The masking member 11 thus formed is retained by a second magnetic chuck44 having a flat chucking surface 44 a, which attracts the metal member10 side of the masking member 11.

Next, as illustrated in FIG. 23B, the masking member 11 is positionedabove a substrate 1 (such as a TFT substrate) placed on the firstmagnetic chuck 42 having a flat chucking surface 42 a, and while asubstrate-side alignment mark, not illustrated, formed on the substrate1 in advance and a mask-side alignment mark 40 formed on the maskingmember 11 in advance are observed through a microscope, the substrate 1is aligned to the masking member 11 so that both marks have apredetermined positional relationship so that, as illustrated in FIG.23C, a thin film pattern forming region 55 (such as a region on an anodeelectrode) is positioned in the opening 9, and thereafter, the film 4 isbrought into close contact on the substrate 1. Thereafter, asillustrated in FIG. 23D, an electromagnet 56 of the first magnetic chuck42 is turned on and an electromagnet 56 of the second magnetic chuck 44is turned off to attract the metal member 10 by a magnetic force of thefirst magnetic chuck 42 to transfer the masking member 11 from thesecond magnetic chuck 44 on to the substrate 1.

Subsequently, by using a laser having a wavelength of 400 nm or shortersuch as a KrF excimer laser of 248 nm, as illustrated in FIG. 24A, aportion of the film 4 corresponding to the thin film pattern formingregion in the opening 9 of the masking member 11 is irradiated withlaser light L having an energy density of from 0.1 J/cm² to 20 J/cm² toform a concave portion 5 having a predetermined depth with a thin layerremaining on the bottom. Subsequently, as illustrated in FIG. 24B, aplasma treatment is performed in a known plasma treatment apparatus, toremove the thin layer on the bottom of the convex portion 5 to form theopening pattern 6 penetrating through the film. Thus, the depositionmask 14 is produced.

Next, on the deposition mask 14, the second magnetic chuck 44 is placed.Then, as illustrated in FIG. 24C, the electromagnet 56 of the secondmagnetic chuck 44 is turned on and the electromagnet 56 of the firstmagnetic chuck 42 is turned off to attract the metal member 10 by thesecond magnetic chuck 44 to thereby transfer the deposition mask 14 tothe second magnetic chuck 44. Thereafter, the deposition mask 14 isreserved in a state in which it is retained by the second magnetic chuck44.

Here, in a case of continuously forming a thin film pattern (such as anorganic EL layer) on the substrate 1 by vapor deposition, in FIG. 24B,when the deposition mask 14 is formed, the substrate 1 and depositionmask 14, that are integrally retained by the first magnetic chuck 42,may be disposed in a vacuum chamber of a vacuum vapor depositionapparatus, and vacuum vapor deposition with a vapor deposition materialmay be performed through the opening pattern 6 of the deposition mask 14to form the thin film pattern.

Next, a process for forming an opening pattern in the film 4 by laserprocessing will be described in more detail.

Here, as illustrated in FIGS. 25A and 25B, explanation will be made withrespect to a case of forming an opening pattern 6 having an elongatedshape as illustrated in FIGS. 13A and 13B in the masking member 11 thathas been formed by bringing into close contact with one surface of thefilm 4 made of a resin transmitting visible light the metal member 10that is a thin plate-shaped magnetic material having a plurality ofpenetrating openings 9 having a shape greater than that of the thin filmpattern and provided so as to correspond to the forming region of thethin film pattern.

In this case, as illustrated in FIG. 25C, a reference substrate 38(refer to FIG. 26) is employed, which is a transparent substrate 57having one surface 57 a provided with a plurality of reference patterns43, to be described later, each having the same shape and dimension asthose of a thin film pattern and to be used as an irradiation target oflaser light L, that are formed in parallel at the same arrangement pitchas an arrangement pitch of the thin film pattern; the referencesubstrate 38 is placed on a stage of a laser processing apparatus sothat the reference pattern 43 is on the underside, and in this state,the metal member 10 is aligned to the reference substrate 38 so thatsuch a reference pattern 43 is positioned in the opening 9 of the metalmember 10; and thereafter, the film 4 is brought into close contact withthe other surface 57 b of the reference substrate 38. Here, on thereference substrate 38, at a position outside the forming region of theplurality of reference patterns 43 and corresponding to the mask-sidealignment mark 40, for example, a cross-shaped substrate-side alignmentmark 58 of a thin film of chromium (Cr) and the like is formedsimultaneously to the reference pattern 43.

Alignment of the metal member 10 to the reference substrate 38 isperformed while the mask-side alignment mark 40, that has been formed onthe masking member 11 in advance, and the substrate-side alignment mark58, that has been formed on the reference substrate 38 in advance, areobserved through a microscope, so that the center of the substrate-sidealignment mark 58 agrees with the center of the mask-side alignment mark40.

Furthermore, close contact of the film 4 with the reference substrate 38is performed by attracting the metal member 10 by a magnetic force of amagnet chuck provided on a rear side of the stage, and at the same time,the metal member 10, the film 4 and the reference substrate 38 areintegrally fixed to the stage.

Next, as illustrated in FIG. 25D, by using a laser having a wavelengthof 400 nm or shorter such as a KrF excimer laser of 248 nm, a portion ofthe film 4 corresponding to the reference pattern 43 in the opening 9 ofthe metal member 10, is irradiated with laser light L having an energydensity of from 0.1 J/cm² to 20 J/cm² to form an opening pattern 6 whichpenetrates through the film 4, having the same shape as that of the thinfilm pattern.

This laser processing is performed in such a manner that while themasking member 11 and the reference substrate 38 are scanned in anarrangement direction (arrow direction in FIG. 25D) of the referencepatterns 43 of the reference substrate 38, an image of the referencepattern 43 is captured by transillumination by the image capturingdevice 17 provided to allow image-capturing of a position on theupstream side of the irradiation position of laser light L in a scanningdirection of the masking member 11 and the reference substrate 38, thereference pattern 43 is detected based on the captured image, andirradiation timing of laser light L is controlled based the detectiontime. Thus, the deposition mask illustrated in FIGS. 13A and 13B iscompleted.

The abovementioned image-capturing device 17 is a line camera having aplurality of light-receiving elements arranged in line in a directionintersecting the scanning direction of the masking member 11 and thereference substrate 38, and the reference pattern 43 can be detectedfrom brightness change in the scanning direction (for example,brightness change from bright to dark in a case of transillumination)based on the captured image by the image-capturing device 17.

Furthermore, the laser processing is performed while confirming that aposition error amount between the center of the opening 9 of the metalmember 10 and the center of the reference pattern 43 of the referencesubstrate 38 is within a tolerable range based on the captured image bythe image-capturing device 17. In more detail, based on the capturedimage by the image-capturing device 17, a brightness change asillustrated in FIGS. 27A and 27B exceeding a threshold value in thescanning direction of the masking member 11 and the reference substrate38, is detected, positions changing from dark to bright are detected tocompute a distance D1 between adjacent such brightness change positions,positions changing from bright to dark are further detected to compute adistance D2 between adjacent such brightness change positions, |D1−D2|is computed, and it is determined whether or not the computed value iswithin a predetermined tolerable range. In this case, if the computedvalue is outside the tolerable range, it is determined that there is analignment error between the metal member 10 and the reference substrate38, or there is a poor forming accuracy of the opening 9 of the metalmember 10, and then, no irradiation with laser light is performed, andthe step of laser processing is terminated immediately.

When the laser processing is completed, as illustrated in FIG. 25E, amagnetic chuck (retaining device), not illustrated, having a flatchucking surface, is placed on an upper surface of the metal member 10,an electromagnet of the electromagnetic chuck is turned on to attractthe metal member 10 by a magnetic force of the magnetic chuck to detachthe deposition mask from the reference substrate 38 and transfer thedeposition mask on to the magnetic chuck side. Thus, the entire processfor producing a deposition mask of the present invention is completed.Thereafter, by handling the deposition mask in a state in which themetal member 10 is attracted to the magnetic chuck, it is possible tomaintain the shape and the position of the opening pattern 6 of thedeposition mask and to perform subsequent formation of a fine thin filmpattern easily.

As an alternative, one surface of a sheet coated with an adhesive thatcan be easily detached, may be brought into close contact with an uppersurface of the metal member 10 so that the metal member 10 is pasted tothe sheet, and the deposition mask may be detached from the referencesubstrate 38. Therefore, handling property of the deposition mask isfurther improved.

Here, in the above, explanation has been made with respect to a case inwhich the opening pattern 6 is formed in the film 4 by performingirradiation with laser light L while scanning the masking member 11 andthe reference substrate 38. However, the present invention is notlimited thereto, and the opening pattern 6 may be formed while movingthe laser light L side in a step movement in an arrangement direction ofthe reference patterns 43 of the reference substrate 38.

The opening pattern 6 can be formed in the film 4 by using a laserprocessing apparatus illustrated in FIG. 9. In this case, the maskingmember 11 and the reference substrate 38 are scanned together.

FIGS. 29A to 29D are cross-sectional views illustrating a forthembodiment of a method for producing a deposition mask of the presentinvention.

Now, formation of the opening pattern 6 by using the above laserprocessing apparatus will be described with reference to the flowchartof FIG. 28.

First, in step S1, the reference substrate 38 and the masking member 11,that is aligned and brought into contact with a surface of the referencesubstrate 38 opposite from a surface on which the reference pattern 43is formed, are integrally placed on a stage so that the referencepattern 43 side faces down, edge portions of the masking member 11 andthe reference substrate 38 are retained by a scanning mechanism, notillustrated, and their scan in the direction of an arrow X in FIG. 9 isstarted with a predetermined speed.

In step S2, images of the masking member 11 and the reference substrate38 are captured by the image-capturing device 17, and the capturedimages are processed by an image-processing unit of the control device19 to detect brightness change from dark to bright and brightness changefrom bright to dark in the arrow X direction (refer to FIGS. 27A and27B).

In step S3, a computing unit of the control device 19 counts the numberof drive pulses of the stepping motor in the scanning mechanism in aduration time from detection of a brightness change from dark to brightto a next brightness change from dark to bright, and the number of drivepulses of the stepping motor in a duration time from detection of abrightness change from bright to dark to a next brightness change frombright to dark; and based on these counted numbers, a distance D1between adjacent brightness change portions from dark to bright and adistance D2 between adjacent brightness change portions from bright todark, are computed. Then, |D1−D2| is computed to compute a positionerror amount between the center of the opening 9 of the metal member 10and the center of the reference pattern 43 is computed.

In step S4, the computing unit compares the position error amount with atolerance retrieved from a memory, and determines whether or not theposition error amount is within the tolerable range. Here, if theposition error amount is within the tolerable range (“YES”), the processproceeds to step S5. On the other hand, if the position error amount isnot within the tolerable range (“NO”), it is determined that there is analignment error between the metal member 10 and the reference substrate38, or there is a poor forming accuracy of the opening 9 of the metalmember 10, and the laser processing is terminated. Then, the scanningmechanism is moved at high speed to transfer the masking member 11 andthe reference substrate 38.

In step S5, based on a detection of an odd numbered brightness changefrom bright to dark, the image processing unit detects a front side edgeportion of the reference pattern 43 in the scanning direction.

In step S6, when the reference pattern 43 is detected in step S5, thecomputing unit counts the number of drive pulses of a stepping motor ofthe scanning mechanism based on the detection time of the referencepattern 43. Then, the counted pulse number is compared with its targetvalue retrieved from a memory, and it is determined whether or not thecounted pulse number has agreed with the target value, that is, whetheror not the masking member 11 and the reference substrate 38 haveintegrally moved a predetermined distance. Here, if the counted pulsenumber is compared with the target value thereof (“YES”), the processproceeds to step S7. Here, the time at which the counted pulse numberbecomes the target value is a time at which the reference pattern 43 ofthe reference substrate 38 reaches an irradiation position with laserlight L by the laser optical unit 16.

In step S7, the control device 19 outputs an oscillation command to theexcimer laser 21, and the excimer laser 21 performs pulse oscillation.Accordingly, a portion of the film 4 on the reference pattern 43 of thereference substrate 38 is irradiated with laser light L, the portion ofthe film 4 is abraded to form the penetrating opening pattern 6 havingthe same shape and dimension as those of the reference pattern 43 (orthin film pattern). Here, the formation of the opening pattern 6 may beperformed by irradiating with a plurality of shots of laser light Lemitted from the excimer laser 21 in a predetermined time period.

Subsequently, the process proceeds to step S8, and it is determinedwhether or not all of the opening patterns 6 corresponding to thereference pattern 43 are formed. Here, if all of the opening patterns 6corresponding to the reference pattern 43 are not formed (“NO”), theprocess returns to step S2, and steps S2 to S8 are repeated until all ofthe opening patterns 6 are formed (“YES”) in step S8.

Here, in step S7, formation of opening patterns 6 corresponding tosecond and subsequent reference patterns 43 from the downstream side ofthe reference substrate 38 in the scanning direction, may be performedin the following manner. That is, the computing unit may count thenumber of drive pulses of the abovementioned stepping motor, compute amoving distance of the scanning mechanism based on the counted number,and compare the moving distance with an arrangement pitch of thereference patterns 43 retrieved from a memory, and the excimer laser 21may be oscillated each time when they agree with each other.

Furthermore, in the above, explanation has been made in such a mannerthat steps S3 to S6 are performed in series, but actually steps S3 toS4, and S5 to S6 are performed in parallel.

The abovementioned opening pattern 6 is not necessarily formed by laserprocessing but it may be formed by etching.

Hereinafter, explanation will be made with respect to a case in whichthe opening pattern 6 is formed by etching. Here, explanation will bemade with respect to a case in which the opening pattern 6 is formed ina masking member formed according to, for example, the processillustrated in FIGS. 22A to 22H.

First, as illustrated in FIG. 29A, both surfaces of the masking member11 are dip-coated, for example, with a positive photoresist 53 and thelike.

Next, as illustrated in FIG. 29B, in a state in which the photomask 54having an opening provided so as to correspond to the opening pattern 6to be formed, is placed so as to face in proximity with a second surface4 b of the film 4 opposite from a first surface 4 a on which the metalmember 10 closely in contact, the second photomask 54 is aligned andpositioned to the masking member 11 using an alignment mark, notillustrated, provided on the photomask 54 and the mask-side alignmentmark 40 provided on the metal member 10, and the photoresist 53 coatingthe second surface 4 b of the film 4 is exposed to light and developed.Consequently, as illustrated in FIG. 29C, in a portion of thephotoresist 53 corresponding to the opening 9, there is formed anopening 59 which is arranged in parallel at the same arrangement pitchas that of a thin film pattern to be vapor-deposited and which has thesame shape and dimension as those of the thin film pattern, and thus, aresist mask 60 is formed.

Furthermore, the masking member 11 is immersed in a tank filled with,for example, an etching solution for polyimide, to etch the film 4 madeof polyimide by using the resist mask 60. Furthermore, as illustrated inFIG. 29D, the opening pattern 6 is formed. In this case, by settingconditions such as coating conditions with the photoresist 53, exposureconditions, developing conditions and etching conditions appropriatelybased on the result of experiment, it is possible to form the openingpattern 6 into a tapered shape having a taper angle of about from 55 to60 degrees. Furthermore, since the etching of the film 4 is performedfrom the second surface 4 b side of the film 4, by an effect of sideetching, the opening pattern 6 has an opening area narrowing from thesecond surface 4 b toward the first surface 4 a. Then, the area of theopening pattern 6 at the first surface 4 a becomes equal to the area ofthe thin film pattern to be formed.

Finally, by washing away the photoresist 53 coating both surfaces of themasking member 11, with an organic solvent, the producing of thedeposition mask illustrated in FIGS. 13A and 13B or FIG. 14 iscompleted. Here, instead of the photoresist 53, a dry film resist may beemployed.

Here, the etching step illustrated in FIG. 29D is preferably performedin a state in which the metal member 10 is magnetically attracted to amagnetic chuck so that the metal member 10 side of the masking memberfaces to the chuck.

The produced deposition mask 14 is used in vapor deposition in thefollowing manner. Referring to FIGS. 30A to 30C, and 31A to 31C,explanation will be made with respect to a case in which an organic ELlayer is formed as the thin film pattern by vapor deposition. Here, asan example, explanation will be made with respect to a case in which anR organic EL layer is formed.

First, as illustrated in FIG. 30A, above a TFT substrate 1 placed on thefirst magnetic chuck 42, the deposition mask 14 attracted and retainedby the second magnetic chuck 44 is positioned. In this case, thedeposition mask 14 is positioned so that its metal member 10 is on theTFT substrate 1 side.

Then, while the mask-side alignment mark 40 of the deposition mask 14and a substrate-side alignment mark, not illustrated, provided on theTFT substrate 1 in advance, are observed by a camera, not illustrated,the first and second magnetic chucks 42, 44 are relatively moved so thatboth of the marks come into a predetermined positional relationship,such as a relationship that the centers of these marks agree with eachother, to thereby align the deposition mask 14 to the TFT substrate 1.

When the alignment between the deposition mask 14 and the TFT substrate1 is completed, the second magnetic chuck 44 is moved down vertically inan arrow −Z direction illustrated in FIG. 30A relatively to the firstmagnetic chuck 42, to bring the metal member 10 of the deposition mask14 into close contact with the TFT substrate 1 as illustrated in FIG.30B. Thus, each opening pattern 6 of the deposition mask 14 ispositioned on an anode electrode 2R for R on the TFT substrate 1.

Subsequently, as illustrated in FIG. 30C, the first magnetic chuck 42 isturned on and the second magnetic chuck 44 is turned off to magneticallyattract the metal member 10 of the deposition mask 14 to the firstmagnetic chuck 42, to transfer the deposition mask 14 on to the TFTsubstrate 1. Thereafter, the second magnetic chuck 44 is moved up in thearrow +Z direction illustrated in FIG. 30C to be removed.

Next, the deposition mask 14, the TFT substrate 1 and the secondmagnetic chuck 44, are integrally disposed at a predetermined positionin the vacuum chamber of the vacuum vapor deposition apparatus in astate in which the deposition mask 14 is on the lower side and faces toa vapor deposition source. Then, as illustrated in FIG. 31A, vacuumvapor deposition is performed under predetermined vapor depositionconditions to form an R organic EL layer 3R on an anode electrode 2R forR on the TFT substrate 1.

In this case, since the opening pattern 6 of the deposition mask 14 isformed in a shape spreading from the first surface 4 a toward the secondsurface 4 b of the film 4, and there is no member causing a shadow ofvapor deposition on a surface of the film 4 to which vapor depositionmaterial molecules arrives, the R organic EL layer 3R deposited on theTFT substrate through the opening pattern 6 has a uniform filmthickness.

Furthermore, the deposition mask 14 of the present invention has thefollowing advantages as compared with conventional metal masks. That is,as illustrated in FIG. 32A, in a case of a conventional metal mask 61, avapor deposition material enters and adheres to a gap 63 between themetal mask 61 and the TFT substrate 1, to form deposition 64. Then, dueto this deposition 64, an edge portion of the opening pattern 6 of themetal mask 61 is lifted and the metal mask is warped into a wave form,thus preventing formation of a fine thin film pattern (such as R organicpattern 3R) with high accuracy in some cases. However, in the case ofthe deposition mask 14 of the present invention, since a large gap 63 ofe.g. about 30 μm, that equals to the thickness of the metal member 10,is present between the film 4 and the TFT substrate 1, and the metalmember 10 is recessed outwardly from the edge portion of the openingpattern 6 at the first surface 4 a, as illustrated in FIG. 32B, even ifthe vapor deposition material enters and adheres to the edge portion ofthe opening pattern 6 of the film 4 at the first surface 4 a, there isno possibility that the edge portion of the opening pattern 6 is liftedby a deposition 64 of the vapor deposition material. Furthermore, sincethere is no possibility that the entered vapor deposition materialenters and adheres to a gap between the metal member 10 and the TFTsubstrate 1, the deposition mask may not be warped into a wave form.Accordingly, according to the deposition mask 14 of the presentinvention, it is possible to form a fine thin film pattern (R organic ELlayer 3R) with high accuracy.

In the above, explanation has been made with respect to the depositionmask 14 including the metal member 10 that has the opening 9 having ashape and dimension greater than those of the opening pattern 6, and isbrought into close contact with one surface 4 a of the film 4. However,the present invention is not limited thereto, and it may be one having ametal member 10 consisting of a plurality of thin pieces provided on onesurface 4 a or inside of the film 4 so as to be distributed outside theopening pattern 6. Hereinafter, explanation will be made with respect toa case in which the metal member 10 consists of thin pieces.

FIGS. 33A and 33B are views illustrating still another modified exampleof a deposition mask of the present invention, in which FIG. 33A is aplan view and FIG. 33B is a cross-sectional view of a D-D section inFIG. 33A. This third embodiment has a construction including a film 4made of a resin such as polyimide or polyethylene terephthalate having athickness of e.g. about from 10 μm to 30 μm, that has a plurality ofopening patterns 6 formed in parallel at the same arrangement pitch asthe arrangement pitch of a stripe-shaped thin film pattern to be formed,and that has the same shape and dimension as those of the thin filmpattern; and a metal member 10 consisting of a plurality of thin piecesprovided on one surface 4 a or inside of the film 4 outside theplurality of opening patterns 6. Hereinafter, explanation will be madewith respect to a case where the metal member 10 consists of a pluralityof thin pieces each made of a magnetic material having a thickness offrom 10 μm to 30 μm and the metal member 10 is provided so as to bebrought into close contact with one surface 4 a of the film 4.

In this case, as illustrated in FIG. 34A, the metal member 10 may be onehaving a striped pattern of which the longitudinal axis agrees with alongitudinal axis of an outside portion that is parallel to thelongitudinal axis of the opening pattern 6 of the film 4. However, ifsuch a stripe-shaped metal member 10 is formed on the film 4 by plating,due to the difference between the film 4 and the metal member 10 in thethermal expansion coefficient, as illustrated in FIG. 34B, a warp occursat the deposition mask in some cases, which may deteriorate its adhesionto the substrate.

To cope with this problem, in the third embodiment of the depositionmask of the present invention, as described above, the metal member 10consisting of a plurality of thin pieces is provided on one surface 4 aof the film 4 so as to be distributed outside the opening pattern 6. Inthis construction, the difference amount between the film 4 and themetal member 10 in the thermal expansion coefficient, is reduced and awarp of the deposition mask 14 is suppressed.

Next, a process for producing the deposition mask of FIGS. 33A to 33Bwill be described.

First, as illustrated in FIG. 35A, for example, in a state in which afilm 4 of e.g. polyimide having a thickness of about 15 μm thattransmits visible light and that is e.g. electrostatically attracted andretained on a stage, not illustrated, having a flat surface, one surface4 a is coated with an underlayer 52, that is a metal layer of a magneticmaterial such as nickel (Ni) having a thickness of about 50 nm, by aknown deposition technique such as sputtering as illustrated in FIG.35B. In this case, the underlayer 52 is not limited to a magneticmaterial and it may be a non-magnetic material having high electricconductivity.

Next, as illustrated in FIG. 35C, on the underlayer 52, a resist 53(photosensitive material) having a thickness of about 15 μm is appliedby e.g. spin-coating.

Next, as illustrated in FIG. 35D, the resist 53 is exposed to light byusing a photomask 54, and developed as illustrated in FIG. 35E to form aplurality of openings 59 that are randomly arranged and penetratethrough the film of the resist 53 to reach the underlayer 52. In thiscase, when the resist 53 is of a positive type, the photomask 54 is oneblocking light in portions corresponding to the plurality of openings59, and when the resist 53 is of a negative type, the photomask 54 isone having openings in portions corresponding to the plurality ofopenings 59.

Subsequently, as illustrated in FIG. 35F, a thin film of a metal member10 of e.g. nickel (Ni) is plated to have a thickness of about 15 μm inthe openings 59.

Furthermore, as illustrated in FIG. 35G, the resist 53 is removed, andthereafter, as illustrated in FIG. 35H, the underlayer 52 around themetal member 10 is removed by etching. Thus, as illustrated in FIG. 36A,a masking member 11 is formed, in which a metal member 10 consisting ofa plurality of randomly distributed film pieces is formed on one surfaceof the film 4.

Thereafter, in a state in which the film 4 of the masking member 11 isbrought into close contact on the reference substrate 38, for example, aportion of the film 4 corresponding to the reference pattern 43 of thereference substrate 38 is irradiated with laser light L as illustratedin FIG. 36B to form the opening pattern 6 in the film 4. Further, asillustrated in FIG. 36C, while laser light L is moved in a step movementin the arrow direction in FIG. 36C relatively to the masking member 11by a distance equal to the arrangement pitch of the reference patterns43 in the direction, processing of the film 4 is conducted to form aplurality of opening patterns 6. Thus, the producing of the depositionmask illustrated in FIGS. 33A and 33B is completed. In this case, it ispreferred to use the laser processing apparatus illustrated in FIG. 9 toform the opening pattern 6 by laser processing.

In FIGS. 33A to 33B, since the masking member 11 is formed, in which themetal member 10 consisting of a plurality of randomly distributed filmpieces is formed on one surface of the film 4, it is possible to use themasking member 14 commonly to various deposition masks different inarrangement pitch or shape of the opening pattern 6.

Accordingly, it is possible to reduce production cost of the depositionmask 14.

Here, in FIGS. 33A to 33B, explanation has been made with respect to acase in which the metal member 10 consisting of a plurality of randomlydistributed film pieces is formed on one surface of the film 4. However,the present invention is not limited thereto, and as illustrated in FIG.37, the plurality of metal members 10 may be arranged in parallel to thelongitudinal axis of the stripe-shaped opening pattern 6 of the film 4in an outside portion parallel to the longitudinal axis. In this case,the plurality of metal members 10 may be arranged at a predeterminedarrangement pitch. In such a construction, it is possible to increaseattraction force to the first magnetic chuck 42 to further improve closecontact between the film 4 and the substrate 1. Here, in this case, themasking member 11 to be formed is dedicated for a specific depositionmask.

Next, explanation will be made with respect to a process for producingan organic EL display device by forming an R (red) organic EL layer, a G(green) organic EL layer and a B (blue) organic EL layer as a pluralityof types of thin film patterns having a predetermined shape on the TFTsubstrate 1 by using the deposition mask 14 produced by the presentinvention.

First, a case of forming an R organic EL layer 3R on the TFT substrate 1will be described with reference to FIGS. 38A to 38C, and 39A to 39C. Inthis case, first, as illustrated in FIG. 38A, the deposition mask 14attracted and retained by the second magnetic chuck 44 is positionedabove the TFT substrate 1 placed on the first magnetic chuck 42, and asillustrated in FIG. 38B, while the mask-side alignment mark 40 and asubstrate-side alignment mark for R are observed through a microscope,the deposition mask 14 is aligned to the TFT substrate 1 so that thesemarks have a predetermined positional relationship, and thereafter, thefilm 4 is brought into close contact with the TFT substrate 1.Accordingly, the opening pattern 6 of the deposition mask 14 ispositioned on an anode electrode 2R for R of the TFT substrate 1.

Thereafter, as illustrated in FIG. 38C, the electromagnet 56 of thefirst magnetic chuck 42 is turned on and the electromagnet 56 of thesecond magnetic chuck 44 is turned off so that the metal member 10 ofthe deposition mask 14 is attracted by the first magnetic chuck 42 totransfer the deposition mask 14 from the second magnetic chuck 44 on tothe TFT substrate 1.

Next, as illustrated in FIG. 39A, the substrate 1 and the depositionmask 14, that are integrally retained by the first magnetic chuck 42,are disposed in the vacuum chamber of the vacuum deposition apparatus,and vacuum deposition is performed through the opening pattern 6 of thedeposition mask 14 to form an R organic EL layer 3R in a R organic Ellayer forming region on an anode electrode 2R for R on the TFT substrate1.

Subsequently, the first magnetic chuck 42 is taken out from the vacuumchamber, and as illustrated in FIG. 39B, the second magnetic chuck 44 isplaced on the deposition mask 14, and as illustrated in FIG. 39C, theelectromagnet 56 of the second magnetic chuck 44 is turned on and theelectromagnet 56 of the first magnetic chuck 42 is turned off so as toattract the metal member 10 of the deposition mask 14 by the secondmagnetic chuck 44 to transfer the deposition mask 14 from the TFTsubstrate 1 side to the second magnetic chuck 44 side. Accordingly, an Rorganic EL layer 3R is formed on an anode electrode 2R for R on the TFTsubstrate 1.

Next, a case of forming a G organic EL layer on the TFT substrate 1 willbe described with reference to FIGS. 40A to 40C, and 41A to 41C.

In this case, first, as illustrated in FIG. 40A, the deposition mask 14attracted and retained by the second magnetic chuck 44 is positionedabove the TFT substrate 1 placed on the first magnetic chuck 42, and asillustrated in FIG. 40B, while the mask-side alignment mark 40 and asubstrate-side alignment mark for G are observed through a microscope,the deposition mask 14 is aligned to the TFT substrate 1 so that thesemarks have a predetermined positional relationship, and thereafter, thefilm 4 is brought into close contact on to the TFT substrate 1.Accordingly, the opening pattern 6 of the deposition mask 14 ispositioned on an anode electrode 2G for G of the TFT substrate 1.

Thereafter, as illustrated in FIG. 40C, the electromagnet 56 of thefirst magnetic chuck 42 is turned on and the electromagnet 56 of thesecond magnetic chuck 44 is turned off so that the metal member 10 ofthe deposition mask 14 is attracted by the first magnetic chuck 42 totransfer the deposition mask 14 from the second magnetic chuck 44 on tothe TFT substrate 1.

Next, as illustrated in FIG. 41A, the substrate 1 and the depositionmask 14, that are integrally retained by the first magnetic chuck 42,are disposed in the vacuum chamber of the vacuum deposition apparatus,and vacuum deposition is performed through the opening pattern 6 of thedeposition mask 14 to form a G organic EL layer 3G in a G organic ELlayer forming region on an anode electrode 2G for G on the TFT substrate1.

Subsequently, the first magnetic chuck 42 is taken out from the vacuumchamber, and as illustrated in FIG. 41B, the second magnetic chuck 44 isplaced on the deposition mask 14, and as illustrated in FIG. 41C, anelectromagnet 56 of the second magnetic chuck 44 is turned on and anelectromagnet 56 of a first magnetic chuck 42 is turned off so as toattract the metal member 10 of the deposition mask 14 by the secondmagnetic chuck 44 to transfer the deposition mask 14 from the TFTsubstrate 1 side to the second magnetic chuck 44 side. By this method, aG organic EL layer 3G is formed on an anode electrode 2G for G on theTFT substrate 1.

Next, a case of forming a B organic EL layer on the TFT substrate 1 willbe described with reference to FIGS. 42A to 42C and 43A to 43C.

In this case, first, as illustrated in FIG. 42A, a deposition mask 14attracted and retained by a second magnetic chuck 44 is positioned abovethe TFT substrate 1 placed on the first magnetic chuck 42, and asillustrated in FIG. 40B, while a mask-side alignment mark 40 and asubstrate-side alignment mark for B are observed through a microscope,the deposition mask 14 is aligned to the TFT substrate 1 so that thesemarks have a predetermined positional relationship, and thereafter, thefilm 4 is brought into close contact on to the TFT substrate 1. By thismethod, the opening pattern 6 of the deposition mask 14 is positioned onan anode electrode 2B for B of the TFT substrate 1.

Thereafter, as illustrated in FIG. 42C, the electromagnet 56 of thefirst magnetic chuck 42 is turned on and the electromagnet 56 of thesecond magnetic chuck 44 is turned off so that the metal member 10 ofthe deposition mask 14 is attracted by the first magnetic chuck 42 totransfer the deposition mask 14 from the second magnetic chuck 44 on tothe TFT substrate 1.

Next, as illustrated in FIG. 43A, the substrate 1 and deposition mask14, that are integrally retained by the first magnetic chuck 42, aredisposed in the vacuum chamber of the vacuum deposition apparatus, andvacuum deposition is performed through the opening pattern 6 of thedeposition mask 14 to form a B organic EL layer 3B in a B organic ELlayer forming region on an anode electrode 2B for B on the TFT substrate1.

Subsequently, the first magnetic chuck 42 is taken out from the vacuumchamber, and as illustrated in FIG. 43B, the second magnetic chuck 44 isplaced on the deposition mask 14, and as illustrated in FIG. 43C, theelectromagnet 56 of the second magnetic chuck 44 is turned on and theelectromagnet 56 of the first magnetic chuck 42 is turned off so as toattract the metal member 10 of the deposition mask 14 by the secondmagnetic chuck 44 to transfer the deposition mask 14 from the TFTsubstrate 1 side to the second magnetic chuck 44 side. Accordingly, a Borganic EL layer 3B is formed on an anode electrode 2B for B on the TFTsubstrate 1.

Furthermore, the deposition mask 14 is transferred from the secondmagnetic chuck 44 side to the first magnetic chuck 42 side in the samemanner as above, and subjected to a plasma treatment in a plasmatreatment apparatus to remove an organic EL deposition material adheringon the deposition mask 14. Then, the deposition mask 14 thus cleaned isagain transferred to the second magnetic chuck 44, and is reserved in astate in which it is retained by the second magnetic chuck 44 or thefirst magnetic chuck 42. Accordingly, there is no possibility that thedeposition mask 14 is twisted or warped so that the shape of the openingpattern 6 is distorted or its position is shifted.

Here, the processes for forming the R organic EL layer 3R, the G organicEL layer 3G and the B organic EL layer 3B, may be performed as acontinuous process by using the same deposition mask 14.

FIGS. 44A to 44D are views illustrating still another modified exampleof the deposition mask, in which FIG. 44A is a plan view, FIG. 44B is abottom view, FIG. 44C is a cross-sectional view of an E-E section ofFIG. 44A, and FIG. 44D is a partial enlarged view of FIG. 44C. Here, thedifferences of the abovementioned deposition masks are that, asillustrated in FIGS. 44A and 44B, the film 4 has a plurality of openingpatterns 6 isolated from one another at positions corresponding toelongated bridges 39 of the metal member 10 to be described later, andthat, as illustrated in FIG. 44C, a ridge portion 65 is formed on acontact surface 4 a with the substrate in a position corresponding to aforming position of elongated bridges 39 of the metal member 10 so as tobe in parallel to the longitudinal axis of the bridges 39.

Furthermore, in the metal member 10, as illustrated in FIG. 44A, thereis formed a plurality of openings 9 which is separated by bridges 39provided at predetermined portions that do not affect formation of theorganic EL layer. Therefore, it is possible to increase the rigidity ofthe metal member 10 and to suppress warp. Accordingly, it is possible tofurther improve alignment accuracy of the deposition mask 14 to thesubstrate to thereby further improve formation accuracy of thin filmpattern.

Next, production of the deposition mask having the abovementionedconfiguration will be described with reference to FIGS. 45A to 45F.

First, as illustrated in FIG. 45A, a surface 4 b of the film 4 oppositefrom the contact surface 4 a of the film 4 with the substrate, issurface-joined with the metal member 10 to form the masking member 11illustrated in FIG. 45B. Here, the metal member 10 is made of e.g. amagnetic material and has a plurality of through openings 9 that isformed so as to correspond to a thin film pattern forming region on thesubstrate, that has a size greater than that of the thin film pattern,and that is separated by a plurality of elongated bridges 39.

The abovementioned surface-joining is preferably such that, asillustrated in FIG. 46, a film 4 having a part (e.g. peripheral region)coated with a metal film 46 is employed and the film 4 is non-fluxsoldered with the metal member 10 by using a non-flux solder 47.Furthermore, in a case of forming groups of thin film patterns in aplurality of regions on a substrate, as illustrated in FIG. 47, it ispreferred to use a film 4 having a plurality of regions 66 correspondingto the plurality of regions of the substrate, in which peripheralregions of the regions 66 are coated with the metal film 46 and furthercoated with the non-flux solder 47 so as to surround the plurality ofregions 66. When a deposition mask 14 formed by non-flux soldering sucha film 4 with the metal member 10 is employed, at a time of e.g. formingan organic EL layer as a thin film pattern by vacuum deposition, nooutgas is generated from the solder and there is no possibility that theorganic EL layer is damaged by impurities in the outgas. Here, a symbol67 in FIGS. 46 and 47 indicates an opening formed so as to correspond tothe mask-side alignment mark 40 formed in the metal member 10, whichallows observation of a substrate-side alignment mark on the substratethrough the film 4.

The abovementioned surface-joining includes the above-mentioned processof compression bonding a film-shaped resin to the metal member 10, aprocess of adhesive bonding a film-shaped resin to the metal member 10,a process of compression bonding the metal member to a resin solution ofhalf-dry state, and a process of coating the metal member 10 with aresin in solution form, and the like.

Next, as illustrated in FIG. 45C, the masking member 11 is placed on thereference substrate 38 (for example, it may be a dummy substrate of aTFT substrate for an organic EL display) on which the reference pattern43 is formed, and thereafter, while the mask-side alignment mark 40 anda substrate-side alignment mark, not illustrated, are observed throughe.g. a microscope, the masking member 11 is aligned to the referencesubstrate 38 so that both marks have a predetermined positionalrelationship.

Subsequently, by using a laser having a wavelength of 400 nm or shortersuch as a KrF excimer laser of 248 nm, as illustrated in FIG. 45D, aportion of the film 4 positioning in the opening 9 of the metal member10, that is a portion of the film 4 corresponding to a thin film patternforming region on the reference pattern 43 of the reference substrate38, is irradiated with laser light L having an energy density of from0.1 J/cm² to 20 J/cm² to form a hole 5 having a predetermined depthleaving a thin layer of about 2 μm in the portion as illustrated in FIG.45E. By using such laser light L of ultraviolet rays, since carbon bondof the film 4 is immediately destroyed by light energy of laser light Lto be removed, it is possible to perform a clean penetrating processwith no residue.

Thereafter, as illustrated in FIG. 45F, in a portion of a contactsurface 4 a of the film 4 to the reference substrate 38, a ridge portion65 is to be formed, is masked, and light exposure, development andetching are performed to form a groove having a predetermined depth, tothereby form a ridge portion 65 on the contact surface 4 a at a positioncorresponding to the forming position of a bridge 39 of the metal member10 so as to be in parallel to the longitudinal axis of the bridge 39.Thus, production of the deposition mask 14 according to a fourthembodiment of the present invention is completed.

Next, a process for forming a thin film pattern using the fourthembodiment of the deposition mask 14 of the present invention will bedescribed with reference to FIGS. 48A to 48C, and 50A to 50C. Here,explanation will be made with respect to a case in which the substrateis a TFT substrate 1 for an organic EL display device, which is providedin advance with a partition wall 68 made of e.g. a silicon nitride (SiN)film and having a height sufficient for protruding from a surfaces oforganic EL layers 3R to 3B of respective colors, at boundary portionsamong an R organic EL layer 3R, a G organic EL layer 3G and a B organicEL layer 3B (regions on anode electrodes 2R, 2G and 2B for respectivecolors) that are thin film patterns as illustrated in FIG. 51.

First, in a first step, as illustrated in FIG. 48A, the deposition mask14 is placed on the TFT substrate 1, and while the mask-side alignmentmark 40 formed in the deposition mask 14 and a substrate-side alignmentmark, not illustrated, provided on the TFT substrate 1 in advance, areobserved by a microscope, the deposition mask 14 and the TFT substrate 1are aligned so that both of the marks come into a predeterminedpositional relationship. Thus, as illustrated in FIG. 48A, the openingpattern 6 of the deposition mask 14 agrees with an anode electrode 2Rfor R on the TFT substrate 1.

In a second step, the deposition mask 14 and the TFT substrate 1, thatare brought into close contact with each other and integrated, aredisposed in e.g. a vacuum chamber of a vacuum deposition apparatus, andas illustrated in FIG. 48B, an R organic EL layer 3R is formed bydeposition on an anode electrode 2R for R on the TFT substrate 1 throughthe opening pattern 6 of the deposition mask 14.

In a third step, the deposition mask 14 and the TFT substrate 1, thatare brought into close contact with each other and integrated, are takenout from the vacuum chamber of the vacuum deposition apparatus, and asindicated by an arrow in FIG. 49A, the deposition mask 14 is moved in asliding manner on the TFT substrate 1 by a distance that is equal to anarrangement pitch of the organic EL layers 3R to 3B of respective colorsin an arrangement direction of the organic EL layers 3R to 3B ofrespective colors. In this case, while a mask surface is observedthrough a microscope, adjustment may be made so that the opening pattern6 of the deposition mask 14 comes on to an anode electrode 2G for G, orthe adjustment may be made so that a substrate-side alignment mark for Gformed on the TFT substrate 1 agrees with the mask-side alignment mark40.

In a fourth step, in the same manner as the second step, the depositionmask 14 and the TFT substrate 1, that are brought into close contactwith each other and integrated, are disposed in e.g. the vacuum chamberof the vacuum deposition apparatus, and as illustrated in FIG. 49B, an Gorganic EL layer 3G is formed by deposition on an anode electrode 2G forG on the TFT substrate 1 through the opening pattern 6 of the depositionmask 14.

In a fifth step, in the same manner as the third step, the depositionmask 14 and the TFT substrate 1, that are brought into close contactwith each other and integrated, are taken out from the vacuum chamber ofthe vacuum deposition apparatus, and as indicated by an arrow in FIG.50A, the deposition mask 14 is moved in a sliding manner on the TFTsubstrate 1 by a distance that is equal to an arrangement pitch of theorganic EL layers 3R to 3B of respective colors in an arrangementdirection of the organic EL layers 3R to 3B of respective colors so thatthe opening pattern 6 of the deposition mask 14 comes on to an anodeelectrode 2B for B.

In a sixth step, in the same manner as the second or the fourth step,the deposition mask 14 and the TFT substrate 1, that are brought intoclose contact with each other to be integrated, are disposed in e.g. thevacuum chamber of the vacuum deposition apparatus, and as illustrated inFIG. 50B, a B organic EL layer 3B is formed by deposition on an anodeelectrode 2B for B on the TFT substrate 1 through the opening pattern 6of the deposition mask 14. Therefore, it is possible to form the organicEL layers 3R to 3B of respective colors one after another by using asingle mask 14 to thereby perform the process for forming organic ELlayers efficiently.

In this case, at a time of moving the deposition mask 14 in a slidingmanner in a lateral direction, since the surface 4 a of the film 4 doesnot contact the organic EL layers 3R and 3G, and a ridge portion 65provided on the surface 4 a of the film 4 slides on the partition wall68, it is possible to reduce a friction between the film 4 and thepartition wall 68. Accordingly, it is possible to move the depositionmask 14 stably on the TFT substrate 1 in a sliding manner.

Here, in the above, description has been made with respect to a processfor producing an organic EL layer of an organic EL display device as athin film pattern. However, the present invention is not limitedthereto, and is applicable to various applications for forming a finethin film pattern, such as formation of a color filter of a liquidcrystal display device, or formation of a wiring pattern of asemiconductor substrate.

It should be noted that the entire contents of Japanese PatentApplications No. 2011-203154 filed on Sep. 16, 2011, No. 2011-203155filed on Sep. 16, 2011, No. 2011-232538 filed on Oct. 24, 2011, No.2011-242089 filed on Nov. 4, 2011, No. 2011-242090 filed on Nov. 4,2011, No. 2011-255298 filed on Nov. 22, 2011, No. 2012-033657 filed onFeb. 20, 2012, No. 2012-038101 filed on Feb. 24, 2012, No. 2012-079207filed on Mar. 30, 2012, and No. 2012-080707 filed on Mar. 30, 2012, onwhich convention priority is claimed, are incorporated herein byreference.

It should also be understood that many modifications and variations ofthe described embodiments of the invention will be apparent to a personhaving an ordinary skill in the art without departing from the spiritand scope of the present invention as claimed in the appended claims.

What is claimed is:
 1. A method for forming a thin film pattern, inwhich a thin film pattern is formed by using a deposition mask that hasbeen produced by forming, through a resin film that transmits visiblelight, an opening pattern having the same shape and dimension as thoseof the thin film pattern so as to correspond to a preliminarilydetermined forming region of the thin film pattern on a substrate; themethod comprising: a first step of bringing the film into close contactwith the substrate; a second step of irradiating a portion of the filmcorresponding to the forming region of the thin film pattern with laserlight, to form an opening pattern having the same shape and dimension ofthose of the thin film pattern on the film to thereby form thedeposition mask; a third step of performing deposition on the portioncorresponding to the forming region of the thin film pattern on thesubstrate through the opening of the deposition mask; and a fourth stepof peeling the deposition mask.
 2. The method for forming a thin filmpattern according to claim 1, wherein the first step includes placingthe substrate on a stage having a chucking device provided therein,aligning a masking member, that is formed by bringing into close contactwith one surface of the film a metal member made of a magnetic ornon-magnetic material having an opening having a shape and a dimensiongreater than those of the thin film pattern so as to correspond to thethin film pattern, so that the forming region of the thin film patternon the substrate is present in the opening, and attracting the metalmember on to the substrate by the chucking device to sandwich the film.3. The method for forming a thin film pattern according to claim 1,further comprising removing impurities from a surface of the formingregion of the thin film pattern between the second step and the thirdstep.